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GaN material-based multi-color horizontal LED chip and LED lamp

An LED chip and lateral structure technology, applied in electrical components, electric solid-state devices, circuits, etc., can solve the problems of difficult packaging, poor reliability, and reduced light, and achieve LED cost reduction, improved integration, and flexible color temperature adjustment. Effect

Inactive Publication Date: 2018-06-08
XIAN ZHISHENG RUIXIN SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, a single light-emitting chip can only emit monochromatic light. If light of other colors needs to be synthesized, light-emitting chips of different colors need to be mixed together and filled with a large amount of phosphor powder. difficult problem
In addition, when light is incident into the phosphor layer, there will be strong scattering, which will cause the phosphor layer to absorb light, causing a large amount of light to be reflected, that is, the light transmitted through the phosphor layer will be significantly reduced.

Method used

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  • GaN material-based multi-color horizontal LED chip and LED lamp
  • GaN material-based multi-color horizontal LED chip and LED lamp
  • GaN material-based multi-color horizontal LED chip and LED lamp

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] See figure 1 , figure 1 A schematic structural diagram of a GaN material-based multi-color lateral structure LED chip provided by the present invention, the chip includes:

[0041] Substrate (11);

[0042] The blue light material, the red light material, and the green light material are all arranged on the substrate (11);

[0043] The blue light positive electrode and the blue light negative electrode are both arranged on the blue light material;

[0044] The red light positive electrode and the red light negative electrode are both arranged on the red light material;

[0045] The green light positive electrode and the green light negative electrode are both arranged on the green light material.

[0046] Further, on the basis of the above implementation manner, please refer to figure 2 , figure 2 A structural schematic diagram of another GaN material-based multi-color lateral structure LED chip provided by the present invention, the chip also includes:

[0047]...

Embodiment 2

[0062] A method for preparing a GaN material-based multi-color lateral structure LED chip provided by the present invention, the LED chip in Example 1 is prepared by the following method, specifically, the method includes:

[0063] Select sapphire as substrate (11);

[0064] growing a blue light material on the substrate (11), wherein the blue light material includes GaN;

[0065] performing selective etching on the blue light material to form a red light wick groove;

[0066] growing a red light material in the red light wick groove;

[0067] performing selective etching on the blue light material to form a green light wick groove;

[0068] growing a green light material in the green light wick groove;

[0069] etching the blue light material, the red light material and the green light material to form a white light material;

[0070] Electrodes are respectively prepared on the blue light material, the red light material, the green light material and the white light mater...

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Abstract

The invention provides a GaN material-based multi-color horizontal LED chip. The chip comprises a substrate (11), a blue light material, a red light material and a green light material that are all arranged on the substrate (11), a blue light positive electrode and a blue light negative electrode that are arranged on the blue light material, a red light positive electrode and a red light negativeelectrode that are arranged on the red light material, and a green light positive electrode and a green light negative electrode that are arranged on the green light material. The GaN material-based multi-color horizontal LED chip has the beneficial effects that a single chip can produce multiple colors of light, and less fluorescent powder is used; the integration degree is increased, and the LEDcost is lowered; and color temperature is adjusted more flexibly.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a GaN material-based multi-color lateral structure LED chip and an LED lamp. Background technique [0002] LED light sources are more and more commonly used in the field of lighting. Usually, the LED light source emits various colors of light through the LED light-emitting chip and phosphor powder. In the prior art, a single light-emitting chip can only emit monochromatic light. To synthesize light of other colors, it is necessary to mix light-emitting chips of different colors together and fill a large amount of phosphor powder. Difficult question. In addition, strong scattering occurs when light is incident on the phosphor layer, which makes the phosphor layer absorb light, causing a large amount of light to be reflected, that is, the light transmitted through the phosphor layer will be significantly reduced. Therefore, how to design a new type of LED chip becomes ext...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/15H01L33/08
CPCH01L27/15H01L33/08
Inventor 左瑜
Owner XIAN ZHISHENG RUIXIN SEMICON TECH CO LTD