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Preparation method of blue light and ultraviolet light led chip

An LED chip and ultraviolet light technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of difficult packaging and poor reliability, and achieve the effect of reducing the cost of LEDs, improving the integration, and flexibly adjusting the color temperature.

Active Publication Date: 2022-07-29
XIAN ZHISHENG RUIXIN SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, each individual light-emitting chip can only emit monochromatic light. To synthesize light of other colors, light-emitting chips of different colors need to be mixed together and filled with a large amount of phosphor, which has poor reliability, Encapsulation is difficult

Method used

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  • Preparation method of blue light and ultraviolet light led chip
  • Preparation method of blue light and ultraviolet light led chip
  • Preparation method of blue light and ultraviolet light led chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] See figure 1 , figure 1 A flow chart of a method for preparing a blue light and ultraviolet light LED chip provided by an embodiment of the present invention, the preparation method includes:

[0060] (a) select a sapphire substrate;

[0061] (b) making a blue light epitaxial layer on the upper surface of the sapphire substrate;

[0062] (c) making an ultraviolet light wick groove in the blue epitaxial layer;

[0063] (d) making an ultraviolet light epitaxial layer in the ultraviolet light wick groove;

[0064] (e) forming electrodes on the blue epitaxial layer and the ultraviolet epitaxial layer.

[0065] Further, the crystal plane of the sapphire substrate is (0001).

[0066] Further, on the basis of the above-mentioned embodiment, step (b) comprises:

[0067] (b1) growing a first GaN buffer layer with a thickness of 3000-5000 nm on the upper surface of the sapphire substrate at a temperature of 400-600 °C; preferably, the growth temperature of the first GaN buf...

Embodiment 2

[0105] Please refer to Figure 2a ~ Figure 2h , Figure 2a ~ Figure 2h This is a schematic diagram of a preparation method of a blue light and ultraviolet light LED chip according to an embodiment of the present invention. On the basis of the above embodiment, the period of the InGaN quantum well / GaN barrier multiple structure is 10, Al 1-x Ga x N quantum well / Al 1-y Ga y An example where the period of the N-barrier multiple structure is 10 will be described. Specifically, the preparation method comprises the steps:

[0106] The first step, select the sapphire substrate 11, such as Figure 2a shown.

[0107] The second step is to grow a first GaN buffer layer 101 with a thickness of 3000 to 5000 nm on the upper surface of the sapphire substrate 11 at a temperature of 400 to 600 °C; A first GaN stabilizing layer 102 with a thickness of 500-1500 nm is grown on the upper surface of the layer 101; at a temperature of 900-1050° C., a thickness of 200-1000 nm is grown on the ...

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Abstract

The invention relates to a preparation method of blue light and ultraviolet light LED chips, the preparation method comprises: (a) selecting a sapphire substrate; (b) making a blue light epitaxial layer on the upper surface of the sapphire substrate; An ultraviolet light wicking groove is made in the blue light epitaxial layer; (d) an ultraviolet light epitaxial layer is made in the ultraviolet light wicking groove; (e) an electrode is made on the blue light epitaxial layer and the ultraviolet light epitaxial layer. The preparation method of the blue light and ultraviolet light LED chips provided by the present invention can generate light of various colors in a single chip, and the amount of phosphor powder is small; in addition, the preparation process is relatively simple and has high feasibility.

Description

technical field [0001] The invention relates to the field of semiconductor device design and manufacture, in particular to a preparation method of blue light and ultraviolet light LED chips. Background technique [0002] Due to their high luminous efficiency, low power consumption, long service life and low operating temperature, LEDs are more and more commonly used in the field of lighting. LEDs emit light of various colors required by users through light-emitting chips and phosphors. [0003] In the prior art, each individual light-emitting chip can only emit light of a single color. If light of other colors needs to be synthesized, light-emitting chips of different colors need to be mixed together and filled with a large amount of phosphor powder, which leads to poor reliability, The difficult problem of packaging. In addition, due to the existence of a large number of discretely distributed phosphor particles in the phosphor glue layer, the light incident into the phos...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/48H01L33/50
CPCH01L33/005H01L33/48H01L33/504
Inventor 冉文方
Owner XIAN ZHISHENG RUIXIN SEMICON TECH CO LTD