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A kind of manufacturing method of LED chip and LED chip
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An LED chip and manufacturing method technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing the light transmittance of LED chips, increasing the difficulty of packaging, poor reliability, etc., so as to reduce Fresnel consumption, reduce difficulty, and improve integration. degree of effect
Active Publication Date: 2020-11-24
XIDIAN UNIV
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[0003] At present, the methods for realizing white light LED mainly include: blue LED+yellow phosphor powder, RGB three-color LED, ultraviolet LED+multi-color phosphor powder, but in this scheme, due to the use of the phosphor powderadhesive layer, there are a large number of discretely distributed particles in the phosphor adhesive layer. Phosphor powder particles, when the light enters the phosphor powder glue layer, there will be strong scattering phenomenon
On the one hand, this kind of scattering strengthens the absorption of light by the phosphor adhesive layer, and on the other hand, it also causes a large amount of light to be reflected, reducing the light transmittance of the LED chip.
[0004] At present, there are still a variety of chips mixed, such as blue chips, red chips and green chips mixed packaging, so that the LED emits white light, but the mixing of multiple chips increases the difficulty of packaging, and the reliability is poor
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Embodiment 1
[0062] Embodiments of the present invention provides a method for producing an LED chip, comprising,
[0063] Step 1, select a substrate 11;
[0064] Step 2, an epitaxial layer is grown in blue light on the substrate 11;
[0065] Step 3. Preparation of red wick groove;
[0066] Step 4, the epitaxial layer in the red light red wick vessel growth;
[0067] Step 5 Preparation green wick groove;
[0068] Step 6, the green light in the green epitaxial layer grown wick groove;
[0069] Step 7, the blue light in the epitaxial layer, the epitaxial layer and the red light of the green light on the surface of the epitaxial layer is provided antireflection film 1001;
[0073] On said substrate in this order from growing a GaN buffer layer 101, GaN layer 102 is stabilized, Si-doped n-type GaN layer 103, active layer 104 formed ...
Embodiment 2
[0107] Please refer to figure 1 , figure 1 A flowchart of a manufacturing method of an LED chip provided in the embodiment of the present invention; on the basis of the above-described embodiment, a method for producing an LED chip provided in a more detailed embodiment of the present invention is described in detail, the following steps:
[0108] Step 1, select a substrate 11;
[0109] Step 2, an epitaxial layer is grown in blue light on the substrate 11;
[0110] Step 3. Preparation of red wick groove;
[0111] Step 4, the epitaxial layer in the red light red wick vessel growth;
[0112] Step 5 Preparation green wick groove;
[0113] Step 6, the green light in the green epitaxial layer grown wick groove;
[0114] Step 7, the blue light in the epitaxial layer, the epitaxial layer and the red light of the green light on the surface of the epitaxial layer is provided antireflection film 1001;
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Abstract
The invention relates to a manufacturing method of an LED chip and the LED chip. The manufacturing method of the LED chip comprises the steps of (1) selecting a substrate (11); (2) growing blue lightepitaxial layers on the substrate (11); (3) preparing red light wick grooves; (4) growing red light epitaxial layers in the red light wick grooves; (5) preparing green light wick grooves; (6) growinggreen light epitaxial layers in the green light wick grooves; (7) arranging an anti-reflection film on the upper surfaces of the blue light epitaxial layers, the red light epitaxial layers and the green light epitaxial layers; and (8) preparing electrodes. The blue light epitaxial layers, the red light epitaxial layers and the green light epitaxial layers grow on one substrate and white light canbe directly emitted in a mixed manner, so that the light extraction efficiency is improved; and furthermore, the epitaxial layers of three colors are directly inherited on one substrate, so that the integration level of the chip is improved; and multiple chips do not need to be integrated together, so that the production cost of a product is reduced and the chip packaging difficulty is also reduced.
Description
Technical field [0001] Technical Field The present invention belongs to the light emitting diode chip manufacture, and particularly relates to a method for producing an LED chip of the LED chip. Background technique [0002] LED (Light Emitting Diode, LED) is a kind of energy into visible light, solid state semiconductor devices, which are widely used in displays, traffic signals, light field display, automotive lights, LED backlight, illumination light source . [0003] Current methods to achieve white LED are: blue LED + yellow phosphor, the RGB tri-color LED, an ultraviolet LED + multicolor phosphor, but in this embodiment, since a phosphor layer, the phosphor present in large number of discrete glue distribution phosphor particles, the light is incident to the phosphor adhesive layer strongly scattering phenomena occur. This scattering on the one hand reinforces the adhesive layer to light absorption of the phosphor, on the other hand lead to a lot of light is reflected to re...
Claims
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Application Information
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