Formation method of isolation column in photoresist inverted trapezoidal structure

Abstract

The invention relates to a formation method of an isolation column in the photoresist inverted trapezoidal structure. The method comprises steps that a negative photoresist layer is formed on a substrate; a mask is utilized to perform first exposure at the first exposure position of the negative photoresist layer under the first predetermined light integral; a mask is utilized to perform second exposure at the second exposure position of the negative photoresist layer under the second predetermined light integral, wherein the second exposure position and the second exposure position have partially-overlapped areas; baking operation of the negative photoresist layer after the second exposure is carried out; development operation of the negative photoresist layer after baking operation is carried out, and the negative photoresist layer is made to form the isolation column in the photoresist inverted trapezoidal structure on the substrate. The formation method is advantaged in that the formed isolation column has the relatively large inclination gradient, so evaporation materials can be excellently separated, connection is not easy to occur during evaporation of the evaporation materials, and thereby the isolation column is made to satisfy evaporation material isolation requirements.

Description

technical field [0001] The invention relates to the technical field of photolithography, in particular to a method for forming an isolation column with a photoresist inverted trapezoidal structure. Background technique [0002] For PMOLED (Passive matrix Organic Light-Emitting Diode, Passive Matrix Organic Light-Emitting Diode) display products, in order to separate the evaporated materials, a layer of inverted trapezoidal RIB (isolation column) layer is usually required on the substrate. The RIB layer has an important influence on the quality of subsequent coatings. [0003] At present, in order to make a photoresist inverted trapezoidal structure, it is generally necessary to use a negative photoresist for exposure treatment. The exposed negative photoresist is left after development, and the negative photoresist in the unexposed area is developed by the developer. . Generally, in the traditional normal process, a photoresist inverted trapezoidal structure can be produce...

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Problems solved by technology

[0004] However, in practical applications, due to the limitations of exposure equipment and photoresist, the light diffraction area of ​​the exposure machine is small, so that the inclination angle of the spacers made is relatively steep, such as figure 2 As shown, the inclination angles of the isolation columns are 79.6 degrees and 79.9 degrees respectively, which are close to 80 degrees, almost close to a right angle, so that the inclination slope is small, and the evaporation materials cannot be separated well, and the requirements for isolating the evaporation materials cannot be met. Require

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