A low power gan/algan resonant tunneling diode

Abstract

The invention relates to a low power consumption GaN / AlGaN resonant tunneling diode. The present invention includes GaN substrates, n + -GaN collector layer, i-GaN first isolation layer, i-AlGaN first barrier layer, i-GaN quantum well layer, i-AlGaN second barrier layer, i-GaN or i-InGaN second isolation layer layer, n + ‑GaN emitter layer, AlN passivation layer, collector metal electrode pins and emitter metal electrode pins. The invention adopts a resonance tunneling diode prepared by epitaxially growing GaN / AlGaN nano-film on an epitaxial intrinsic GaN substrate with a high-quality non-polar upper surface. It has sufficiently obvious and practical negative differential resistance volt-ampere characteristics, low peak current and valley current under low enough forward bias, and low power consumption.

Description

technical field [0001] The invention relates to the technical field of compound semiconductor quantum devices, in particular to a low-power GaN / AlGaN resonant tunneling diode. Background technique [0002] For conventional GaN / AlGaN resonant tunneling diode (RTD) devices, due to the significant spontaneous polarization effect of the GaN / AlGaN barrier layer and the significant piezoelectric polarization effect under the action of an applied voltage, the GaN / AlGaN barrier layer will form polarized electric field. Due to the constraints of the intrinsic structure of GaN / AlGaN materials and the kinetics of epitaxial growth on the surface, for the c-plane epitaxial growth, the epitaxial growth of high-quality GaN / AlGaN nanofilms has the same initial polar plane as the final polar plane. If the upper surface of the GaN substrate is c-plane, that is, the polarity of the Ga surface, the direction of the polarization electric field in the AlGaN barrier layer is the same as the direc...

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Problems solved by technology

If the upper surface of the GaN substrate is c-plane, that is, the polarity of the Ga surface, the direction of the polarization electric field in the AlGaN barrier layer is the same as the direction of the external electric field of the device, which will enhance the resonant tunneling effect of the RTD device, which is beneficial to the ratio of the barrier layer in Under the condition of no polarization effect, a stronger negative differential resistance (NDR) volt-ampere characteristic is obtained, that is, a higher peak / valley current density is obtained, so the power consumption of the device is higher; and if the upper surface of the GaN substrate is surface, that is, the polarity of the N surface, the direction of the polarized electric field in the AlGaN barrier layer is opposite to the direction of the applied electric field of the device, which will inhibit and destroy the resonant tunneling effect of the RTD device, and it is difficult to obtain an obvious practical negative differential resistance (NDR ) volt-ampere characteristics

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