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Sputtering target-backing plate assembly

A technology of backing plate and sputtering target, which is applied in sputtering coating, welding equipment, ion implantation coating, etc., to achieve the effect of suppressing the generation of powder particles, reducing the failure rate, and uniform film formation

Active Publication Date: 2018-06-29
JX NIPPON MINING & METALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The invention of the present application solves the problems arising in the case of bonding the sputtering target and the backing plate using welding materials, and provides a sputtering target that effectively suppresses the generation of powder particles and does not pollute the internal environment of the sputtering device (chamber) -Backing board assembly

Method used

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  • Sputtering target-backing plate assembly

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0085] A disk-shaped single-crystal silicon (Si) target with a diameter of 330 mm and a disk-shaped oxygen-free copper (OFC) backing plate were joined so that the average layer thickness of indium (In) as a solder material was 0.28 mmt ( bonding).

[0086] Next, the indium solder material existing between the target and the backing plate was shaved off by 0.28 mm on one side from the side surface of the target, and dimples were formed on the entire outer periphery.

[0087] Next, a copper wire having a diameter of 0.3 mm and a purity of 4N was fitted into the recess with a resin spatula, thereby obtaining a sputtering target-backing plate assembly. Next, this assembly was installed in a sputtering apparatus, sputtering was performed, and the generation amount of powder particles was detected.

[0088] In the evaluation of powder particles, a film is formed on a dummy wafer with a power of 2000W. At the same time, every time 1 kWh is passed, a monitor wafer is placed. At this ...

Embodiment 2

[0097] A disk-shaped single crystal silicon (Si) target with a diameter of 330 mm and a disk-shaped molybdenum backing plate were bonded so that the average layer thickness of indium (In) as a solder material was 0.45 mmt.

[0098] On the upper surface of the backing plate, a groove with a width of 0.2 mm and a depth of 0.1 mm is processed in advance based on the point 0.3 mm inward from the periphery.

[0099] Next, the indium solder material existing between the target and the backing plate was shaved off by 0.5 mm one side from the side surface of the target, including scooping out the indium that had entered the above-mentioned groove, while forming pits on the entire periphery.

[0100] Next, a molybdenum wire with a diameter of 0.6 mm and a purity of 3N5 whose surface was roughened to Ra 5 μm with sandpaper was inserted into the cavity with a resin spatula to obtain a sputtering target-backing plate assembly. Next, this assembly was installed in a sputtering apparatus, s...

Embodiment 3-11、 comparative example 3-11

[0108] In addition, with the combinations described in Table 1, the number of particles on the substrates formed in the same manner by the sputtering test was compared.

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Abstract

The present invention provides a sputtering target-backing plate assembly, in which solder is used to bond a sputtering target with a backing plate to form the sputtering target-backing plate assembly. The target / backing plate assembly is characterized by the fact that: the outer edge of the solder between the sputtering target and the backing plate is covered by a linear material whose melting point is from 600DEG C to 3500DEG C and whose axial cross-section is circular, oval or rectangular. The present invention provides a technique as follows: when the solder is used to bond the sputteringtarget and the backing, electric arcs or particles generated due to the exposure of the solder between the sputtering target and backing plate are effectively inhibited.

Description

[0001] This application is a divisional application of a Chinese patent application with an application date of August 6, 2015 and an application number of 201510477273.X. technical field [0002] The present invention relates to a sputtering target-backing plate bonded body capable of suppressing generation of arc discharge or particle generation when a sputtering target and a backing plate are bonded using a welding material. Background technique [0003] One of thin film forming methods for semiconductor devices is sputtering. However, in recent years, the control of powder particles in sputtering has become more and more strict with the advancement of miniaturization in the nanometer field. Therefore, even for methods that have been practiced for many years, it is necessary to re-examine and find countermeasures to reduce particles in sputtering. [0004] For sputtering targets, there are roughly two types of bonding between the target material and the backing plate. O...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34
CPCB23K1/00C23C14/0682C23C14/08C23C14/14C23C14/3407C23C14/3414
Inventor 高村博铃木了
Owner JX NIPPON MINING & METALS CORP
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