Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for electrostatic adsorption on substrate with MOS (metal oxide semiconductor) structure

A MOS structure, electrostatic adsorption technology, applied in circuits, electrical components, electric solid devices, etc., can solve problems such as poor electrostatic adsorption effect, achieve good electrostatic adsorption effect, avoid falling off, and improve adsorption effect.

Active Publication Date: 2018-06-29
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF10 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem that the above-mentioned electrostatic chuck has poor electrostatic adsorption effect on the substrate formed with the MOS structure, the present invention provides a method for electrostatic adsorption of the substrate formed with the MOS structure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for electrostatic adsorption on substrate with MOS (metal oxide semiconductor) structure
  • Method for electrostatic adsorption on substrate with MOS (metal oxide semiconductor) structure
  • Method for electrostatic adsorption on substrate with MOS (metal oxide semiconductor) structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] A method for electrostatic adsorption to a substrate formed with a MOS structure proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0026] figure 1 It is a schematic flow diagram of the method for electrostatic adsorption to a substrate formed with a MOS structure in Embodiment 1 of the present invention; figure 2 It is a schematic diagram of the structure of the substrate formed with the MOS structure in the method for electrostatic adsorption of the substrate formed with the MOS structure in the first embodiment of the present invention; the following pr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for electrostatic adsorption on a substrate with a MOS (metal oxide semiconductor) structure. The method has the advantages that a redundancy conductive layer doped with conductive particles is formed at the back surface of the substrate, and the forming process of the redundancy conductive layer is compatible with an MOS technology, so that the redundancy conductive layer is directly prepared by the MOS forming technology, and the additional technology steps are not needed; the adsorption effect of an electrostatic chuck on the substrate is improved, the falling of the substrate is avoided, and the influence to the preparation process is avoided.

Description

technical field [0001] The invention relates to the field of semiconductor preparation, in particular to an electrostatic adsorption method for a substrate formed with a MOS structure. Background technique [0002] In the semiconductor manufacturing process, electrostatic chucks are usually required to adsorb substrates in various machines. Specifically, there are multiple positive and negative electrode pairs in the electrostatic chuck. By connecting each electrode to a high-voltage DC power supply, polarized charges are generated on the surface of the electrostatic chuck in contact with the substrate, and the polarized charges form an electric field on the surface of the electrostatic chuck. Polarized charges are generated on the back of the substrate in contact with it, and the corresponding free charges are also gathered to the back by the electric field. Under the action of electrostatic attraction generated by opposite charges, the substrate is firmly adsorbed and fixe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683H01L23/58
CPCH01L21/6831H01L23/585
Inventor 蒙飞
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com