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Image sensor and formation method thereof

An image sensor, conductivity type technology, applied in the direction of electric solid devices, semiconductor devices, electrical components, etc., can solve problems such as interface defects, semiconductor substrate lattice defects, and degradation of image sensor performance.

Inactive Publication Date: 2018-07-06
HUAIAN IMAGING DEVICE MFGR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] During the fabrication of image sensors, etching of semiconductor substrates creates lattice defects or interface defects that degrade image sensor performance

Method used

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  • Image sensor and formation method thereof
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  • Image sensor and formation method thereof

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Embodiment Construction

[0016] Various exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. It should be noted that relative arrangements of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present disclosure unless specifically stated otherwise.

[0017] The following description of at least one exemplary embodiment is merely illustrative in nature and in no way intended as any limitation of the disclosure, its application or uses.

[0018] Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods and devices should be considered part of the Authorized Specification.

[0019] In all examples shown and discussed herein, any specific values ​​should be construed as exemplary only, and not as limitations. Therefore, other examples of the exemplary ...

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Abstract

The invention relates to a formation method of an image sensor. The method comprises steps that a groove is formed around a photodiode, and the photodiode comprises a first doping region in a first conductivity type formed in a semiconductor substrate in a second conductivity type; the groove is filled with a material including ions in the second conductivity type, and concentration of the ions inthe second conductivity type in the material is higher than concentration of ions in the second conductivity type in the semiconductor substrate; the ions in the second conductivity type in the material diffuse, and a second doping region in the second conductivity type covering the groove is formed around the groove. The invention further relates to the image sensor. The method is advantaged inthat the negative effect caused by lattice defects or interface defects because of etching of the semiconductor substrate can be effectively inhibited.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, and in particular, to an image sensor and a method for forming the image sensor. Background technique [0002] During the fabrication of image sensors, etching of semiconductor substrates can generate lattice defects or interface defects that degrade the performance of image sensors. [0003] Therefore, there is a need for new technology. Contents of the invention [0004] An object of the present disclosure is to provide a novel image sensor and a method of forming the image sensor. [0005] According to a first aspect of the present disclosure, there is provided a method of forming an image sensor, comprising: forming a groove around a photodiode, wherein the photodiode includes a first conductive layer formed in a semiconductor substrate of a second conductive type. a first doped region of type; filling the groove with a material comprising ions of a second conductivity typ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L31/0352
CPCH01L27/14605H01L27/14692H01L31/03529H01L27/14612H01L27/1463H01L27/1464H01L27/14643H01L27/14689H01L31/103H01L31/0352
Inventor 黄晓橹吕相南北村阳介
Owner HUAIAN IMAGING DEVICE MFGR CORP