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Non-volatile memory device and programming method thereof

A non-volatile, memory technology, used in static memory, read-only memory, digital memory information, etc., can solve the problem of programming threshold voltage distribution deterioration, and achieve the effect of reducing programming threshold voltage distribution

Active Publication Date: 2018-07-17
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the time interval between the suspend state and the resume state of the program can lead to poor programming threshold voltage distribution

Method used

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  • Non-volatile memory device and programming method thereof
  • Non-volatile memory device and programming method thereof
  • Non-volatile memory device and programming method thereof

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Embodiment Construction

[0034] In the following detailed description, only specific example embodiments of the inventive concept have been shown and described, simply by way of illustration. The described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present inventive concept. Accordingly, the drawings and description should be regarded in an illustrative rather than a restrictive sense in nature. The same reference numbers may refer to the same elements throughout the specification.

[0035] figure 1 is a diagram describing a nonvolatile memory device.

[0036] refer to figure 1 , the nonvolatile memory device 100 includes a memory cell array 110 , a row decoder 120 , a data input / output circuit (data I / O circuit) 130 , a control circuit 140 and a voltage generator 150 .

[0037] The memory cell array 110 may include a plurality of memory blocks BLK1 to BLKz. The memory blocks may be connected to the row decoder 120 through word lin...

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Abstract

The invention relates to a non-volatile memory device and a memory system. The non-volatile memory device includes: a memory cell array including a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines, a row decoder configured to selectively control the plurality of word lines, a page buffer including a plurality of latches corresponding to the plurality ofbit lines, respectively, and a control circuit configured to control the non-volatile memory device to enter a suspend state after terminating a verify operation of a program loop of a program operation of the plurality of memory cells in response to a suspend request being generated during an execution operation of the program loop.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] This application claims priority to Korean Patent Application No. 10-2017-0002922 filed in the Korean Intellectual Property Office on Jan. 9, 2017, the entire contents of which are incorporated herein by reference. technical field [0003] The present disclosure relates to a nonvolatile memory device and a programming method thereof. Background technique [0004] Semiconductor memory devices can generally be classified into volatile memory devices and nonvolatile memory devices. The non-volatile memory device can retain stored data without loss of data in response to a power cessation, and it can be used as a data storage device or memory for the system. Flash memory devices among nonvolatile memory devices are widely used as data storage devices in place of hard disks. [0005] When a read operation is desired during a program operation, the flash memory device may suspend the currently executing program operation, p...

Claims

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Application Information

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IPC IPC(8): G11C16/34G11C16/10
CPCG11C16/10G11C16/3404G11C16/3454G11C7/22G11C16/0483G11C16/26G11C16/32G11C16/3459G11C2029/0411G11C16/24G11C16/08G11C2216/20
Inventor 李知尚
Owner SAMSUNG ELECTRONICS CO LTD
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