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Test method for power semiconductor device

A technology for power semiconductors and testing methods, applied in the semiconductor field, can solve problems such as uneven integrity defects, inability to detect chip structures, etc., to achieve the effect of improving the overall reliability level and reducing the proportion of early failures

Active Publication Date: 2018-07-31
WUXI THUNDER MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The invention provides a method for testing power semiconductor devices to solve the problem in the prior art that power semiconductor devices with uneven chip structures or integrity defects cannot be detected

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  • Test method for power semiconductor device
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Embodiment Construction

[0024] In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0025] figure 1 It is a flowchart of a testing method for a power semiconductor device according to an embodiment of the present invention. The present invention provides a test method for a power semiconductor device, in which items of ±IGSS and IDSS are added to the items of conventional testing of reverse leakage current, and the items of ±IGSS and IDSS are set to be measured under the conditions of voltage of ±IGSS and IDSS Test reverse leakage current, the test method of described power semiconductor comprises the steps:

[0026] In step S10, ±IGSS test voltage values ​​are determined.

[0027] (1) Test the reverse breakdown voltage of the product under test on the graph instrument to measure the limit voltage that the product unde...

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Abstract

The present invention provides a test method for a power semiconductor device. According to the test method for the power semiconductor device of the invention, in a project of conventionally testingreverse leakage current, + / -IGSS and IDSS items are set additionally, the + / -IGSS and IDSS items are set to test reverse leakage current under + / -IGSS and IDSS measured voltage conditions. The test method for the power semiconductor device includes the following steps that: step 1, + / -IGSS test voltage values are determined; step 2, an IDSS test voltage value is determined; and step 3, the determined + / -IGSS and IDSS voltage values are adopted to perform reverse leakage current testing on a tested product. With the test method for the power semiconductor device of the invention adopted, a power semiconductor device with chip structure unevenness or integrity defects cannot be detected out in the prior art can be solved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for testing power semiconductor devices. Background technique [0002] Power semiconductor devices work under the conditions of high current and high voltage, which have high requirements on the uniformity and integrity of the internal structure of power semiconductor chips; however, in the actual production process of chips, due to the long processing and manufacturing process, the production process will have With the introduction of uncertain factors, it is impossible to guarantee 100% that the internal structure of all chips is intact. There will be a certain proportion of power semiconductor devices with uneven internal structure or structural integrity defects. These defective chips are prone to failure during use; and These devices with structural inhomogeneity or integrity defects cannot be detected by ordinary semiconductor testing methods. Contents of the invent...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/26
Inventor 黄昌民詹小勇许玉欢
Owner WUXI THUNDER MICROELECTRONICS CO LTD