Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Connecting bar

A technology of connecting strips and strips, which is applied in the field of connecting strips and can solve problems such as SOI integrated circuit defects

Active Publication Date: 2018-07-31
STMICROELECTRONICS (CROLLES 2) SAS +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] It has been observed that, in many cases, SOI integrated circuits in which tie bars connect multiple elements of a circuit contain defects

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Connecting bar
  • Connecting bar
  • Connecting bar

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Like elements are referenced by like reference numerals in the various figures, and furthermore, the various views are not drawn to scale. For the sake of clarity, only those elements that are useful to the understanding of the described embodiments are shown and are shown in detail.

[0021] In the following description, when referring to positional descriptions such as the terms "front", "above", "upper", etc. or orientation descriptions such as the term "vertical", the references made are based on the elements discussed in the drawings. position.

[0022] figure 1 is a partial schematic perspective view of three transistors 10 formed in and on a thin silicon-on-insulator (SOI) layer. Each transistor is formed in and on an active region defined in a thin silicon layer. Each transistor includes a gate 12 , a drain region 14 and a source region 16 . Each active area is located on an insulator layer 18 called BOX (for buried oxide), usually made of silicon dioxide. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A connecting bar electrically connects separate circuit zones of an integrated circuit. The connecting bar is formed by a main portion that is a conductive strip extending above separate circuit zonesto be interconnected. The conductive strip is separated from the integrated circuit by a dielectric except at the circuit zones to be interconnected. The connecting bar further includes secondary portions that are conductive pads passing through the dielectric in a vertical direction from the circuit zone to the conductive strip.

Description

[0001] This application claims priority from French Patent Application No. 1750540, filed January 23, 2017, the disclosure of which is incorporated by reference in its entirety to the fullest extent permitted by law. technical field [0002] This application relates to the field of integrated circuits, and more particularly, to the production of tie bars that form electrical connections between elements of an integrated circuit, such as between the sources of multiple transistors formed in a thin silicon-on-insulator (SOI) layer . Background technique [0003] SOI transistors are an alternative to bulk silicon transistors. SOI transistors are formed in and on a thin layer of silicon separated from the silicon wafer by a layer of insulator, usually silicon dioxide. [0004] It has been observed that, in many cases, SOI integrated circuits in which tie bars connect multiple elements of the circuit contain defects. Contents of the invention [0005] Accordingly, one embodim...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/528H01L21/768
CPCH01L21/76877H01L23/528H01L21/76895H01L23/485H01L21/76807H01L23/53257H01L27/1203H01L23/481H01L21/76802H01L21/76879H01L23/535
Inventor P·波伊文D·里斯图伊尤
Owner STMICROELECTRONICS (CROLLES 2) SAS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products