Unlock instant, AI-driven research and patent intelligence for your innovation.

Substrate and manufacturing method of substrate

A manufacturing method and substrate technology, which are applied in the direction of electrical connection of printed components, printed circuit components, and the formation of electrical connection of printed components, can solve problems such as malfunction, and achieve the effects of improving connectivity and stabilizing electrical conduction.

Active Publication Date: 2020-10-09
MEIKO ELECTRONICS CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In particular, semiconductors using Si will cause malfunctions and failures when the ambient temperature becomes 100°C or higher.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Substrate and manufacturing method of substrate
  • Substrate and manufacturing method of substrate
  • Substrate and manufacturing method of substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] Such as figure 1 and figure 2 As shown, the substrate 1 of the present invention is mainly constituted by a laminated wiring board 3 called a multilayer board (including double-sided boards) on which a plurality of conductive layers 2 are formed. exist figure 1 In the example of , a so-called four-layer board formed with four conductive layers 2 is shown. The conductive layer 2 is formed on each layer as a conductive pattern. An insulating layer 4 is disposed between the conductive layers 2 . The insulating layer 4 is formed of insulating materials such as prepreg, for example. More specifically, for the insulating layer 4 , for example, a prepreg in which a sheet-shaped glass cloth 5 woven with glass fiber yarns is used is used in an epoxy resin.

[0040] Through holes 6 are formed in the laminated wiring board 3 . The through hole 6 penetrates the laminated wiring board 3 . The hole shape of the through hole 6 is substantially cylindrical. In a plan view of t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A substrate (1) is provided with: a laminated wiring board (3) which has formed therein a plurality of conductive layers (2) composed of a conductive material; a through-hole (6) formed so as to penetrate the laminated wiring board (3); a metal piece (10) disposed inside the through-hole (6) so as to extend over the entire length of the through-hole (6); a bulging portion (8) that is formed so as to bulge outward from an outer edge of the through-hole (6) and is cut out along the entire length of the through-hole (6) in the longitudinal direction; a bulge hole (9) that is formed by being surrounded by the surfaces of the bulging portion (8) and the metal piece (10) that is exposed inside the bulging portion (8); and a plating film (13) that covers the inner wall of the bulge hole (9).

Description

technical field [0001] The present invention relates to a substrate and a method for manufacturing the substrate. The substrate is a substrate such as a printed wiring board, in which a metal sheet is embedded, and has excellent large current characteristics and heat dissipation characteristics. Background technique [0002] Semiconductor elements in circuits tend to generate more heat due to higher densities and higher currents. In particular, semiconductors using Si cause malfunctions and failures when the ambient temperature becomes 100° C. or higher. As heat generating components such as such semiconductor elements, there are switching elements such as IGBT (Insulated Gate Bipolar Transistor) and IPM (Intelligent Power Module), for example. [0003] In order to effectively cool the heat-generating component, the heat-dissipating path is formed so that the heat generated from the heat-generating component dissipates toward the opposite side of the substrate. Specificall...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H05K1/11H05K1/02H05K3/40
CPCH05K1/02H05K1/11H05K3/40
Inventor 关保明高林纯平牧野直之志志目和男
Owner MEIKO ELECTRONICS CO LTD