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Helium pressure control system and method in electrostatic chuck destaticizing

A technology of pressure control and electrostatic chuck, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve problems such as the balance of pressure without consideration, and achieve the effects of extending maintenance cycles, reducing wafer defects, and reducing pollution sources

Active Publication Date: 2018-08-07
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The current electrostatic chuck design does not consider the balance of the pressure in the vacuum chamber and the pressure in the helium pipeline on the back of the electrostatic chuck during the process of removing static electricity

Method used

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  • Helium pressure control system and method in electrostatic chuck destaticizing
  • Helium pressure control system and method in electrostatic chuck destaticizing
  • Helium pressure control system and method in electrostatic chuck destaticizing

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Embodiment Construction

[0033] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0034] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0035] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0036] Such as figure 2 and image 3 As shown, a helium pressure control system for static chuck removal is p...

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Abstract

The invention provides a helium pressure control system and method in electrostatic chuck destaticizing; the method comprises the following steps: using a first valve set to control a first backside cooling air pressure controller to be disconnected from a first air pipe, and controlling a first pressure controller to be connected with the first air pipe; using a second valve set to control a second backside cooling air pressure controller to be disconnected from a second air pipe, and controlling a second pressure controller to be connected with the second air pipe; using a third valve set and a fourth valve set to control a molecular pump to extract air from the two air pipes; using two pressure controllers to control the pressure in the two air pipes. The advantages are that the methodcan balance the pressure in a reaction cavity and the pressure in the air pipes, thus preventing reaction resultant from contacting the surface of the electrostatic chuck, reducing pollution sources,reducing wafer defects, and prolonging the vacuum cavity maintenance period.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a helium pressure control system and method when an electrostatic chuck removes static electricity. Background technique [0002] Electrostatic chuck (E-chuck) is an important component for wafer fixing and temperature control. The electrostatic force generated by its surface insulating layer attracts and fixes the wafer. Then, the surface of the wafer is stabilized at a predetermined temperature by the cooling gas in the channel of the insulating layer and the circulating cooling liquid in the susceptor. [0003] Ideally, the wafer and the insulating layer are in complete surface contact, and both belong to the category of solid heat transfer. But in reality, due to the roughness of the two planes, it is impossible to achieve complete surface contact, and the actual contact area is about 5% to 10%. This makes the contact behavior of the two transform from surface co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L21/683
CPCH01L21/67011H01L21/6831
Inventor 袁鹏华
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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