Infrared imaging device, fabrication method thereof and simulation infrared spherical camera

An infrared imaging and infrared detector technology, which is applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of edge distortion, fixed infrared detector array structure, and the inability to apply bionic eye structure preparation, etc., to achieve image The effects of small edge distortion, improved bio-integration capability, and multiple design degrees of freedom

Inactive Publication Date: 2018-08-17
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0006] In view of the above-mentioned technical problems, the main purpose of this disclosure is to provide a flexible spherical structure infrared imaging device and its preparation method, and a bionic infrared spherical camera to solve the problem of fixed infrared detector array structure, edge distortion, and inability to be applied to bionic eyes. Technical issues in the preparation of internal structures

Method used

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  • Infrared imaging device, fabrication method thereof and simulation infrared spherical camera
  • Infrared imaging device, fabrication method thereof and simulation infrared spherical camera
  • Infrared imaging device, fabrication method thereof and simulation infrared spherical camera

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preparation example Construction

[0039] In addition, the present disclosure also provides a method for preparing an infrared imaging device with a flexible spherical structure, such as figure 2 As shown, the preparation method of the flexible spherical structure infrared imaging device comprises:

[0040] provide a flexible spherical substrate and stretch it to a flat state; and

[0041] An infrared detector array is formed on the inner surface of the substrate stretched to a flat state, and the substrate is shrunk to a spherical surface, thereby completing the preparation of the infrared imaging device with a flexible spherical structure.

[0042] More specifically, the method for preparing an infrared imaging device with a flexible spherical structure includes:

[0043] Step 1: Use metal organic chemical vapor deposition MOCVD or molecular beam epitaxy MBE equipment to grow epitaxial wafers: sequentially form a sacrificial layer, a contact layer, an absorption layer and a cap layer on the substrate. Comp...

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Abstract

The invention discloses and provides a flexible spherical structure infrared imaging device, a fabrication method thereof and a simulation infrared spherical camera. The flexible spherical structure infrared imaging device comprises a substrate and an infrared detector array, wherein the infrared detector array is arranged on an inner surface of the substrate, and the substrate is a flexible spherical substrate. The flexible spherical structure infrared imaging device, the fabrication method thereof and the simulation infrared spherical camera have repeated bending restorability and can be applied to the field of wearable equipment, simulation organism, human-computer interaction and the like, the biological integration capability of infrared photoelectric imaging equipment can be substantially improved, the preparation process is more mature, and the processing cost is low.

Description

technical field [0001] The disclosure relates to the technical fields of flexible and extensible electronics, semiconductor preparation and photoelectric imaging, and in particular to a flexible spherical structure infrared imaging device, a preparation method thereof, and a bionic infrared spherical camera. Background technique [0002] Infrared detectors are devices that convert incident infrared radiation signals into electrical signals, which can capture infrared light that is imperceptible to the human eye and output it in the form of electrical signals. Materials and devices for infrared detection mainly include pyroelectric detectors based on thermal effects, photodetectors based on photoelectric effects, and new material detectors based on graphene, carbon nanotubes, and quantum dots. At present, the technology of photoelectric detectors is the most mature. After the infrared detectors based on photoelectric technology are miniaturized, they can be fabricated into a ...

Claims

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Application Information

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IPC IPC(8): H01L27/146H04N5/33
CPCH01L27/14632H01L27/14649H01L27/14687H04N5/33
Inventor 徐云白霖陈华民宋国峰陈良惠
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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