Light-emitting element and method for manufacturing light-emitting element

Abstract

The invention discloses a light-emitting element and a manufacturing method thereof. The light-emitting element comprises a substrate, a bonding metal layer, a conductive oxide layer, an epitaxial layer, an insulating layer, a first ohmic contact layer, a second ohmic contact layer, a third ohmic contact layer and a wire. The bonding metal layer is arranged on a first partial surface of the substrate. The conductive oxide layer is arranged on the bonding metal layer. The epitaxial layer is arranged on a first partial surface of the conductive oxide layer. The insulating layer is arranged at the first side edges of the bonding metal layer, the conductive oxide layer and the epitaxial layer, and is arranged on a first partial surface of the epitaxial layer. The first ohmic contact layer is arranged on a second partial surface of the substrate. The second ohmic contact layer is arranged on a second partial surface of the epitaxial layer. The third ohmic contact layer is arranged on a second partial surface of the conductive oxide layer. The wire is electrically connected with the first ohmic contact layer and the second ohmic contact layer.

Description

technical field [0001] The present invention relates to a light-emitting element and a method for manufacturing the light-emitting element, in particular to a light-emitting element and a method for manufacturing the light-emitting element in a Chip Scale Package by utilizing circuit design and a corresponding packaging process. Background technique [0002] In the technical field of light-emitting elements, light-emitting diodes are currently widely used products, which can be used in various technical fields, and the application of thinner and smaller sizes is becoming more and more extensive, making more and more products towards chip size Packaging (Chip Scale Package) technology development. For example, currently many products using light-emitting diodes use flip chip packages to reduce size and thickness to achieve chip-scale packaging. [0003] see Figure 1A , which is a structural schematic diagram of a known light-emitting diode. The light emitting diode 1 inclu...

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Problems solved by technology

However, since the wire bonding process requires solder ball bonding on the surface of the LED, it not only occupies a large area, but also requires subsequent packaging procedures, which makes the overall volume of the LED larger, making it impossible to reduce the size and reduce the size. The purpose of thinning

[0006] Furthermore, if the flip-chip package is used to reduce the size and thickness of the light-emitting diode structure, if the co-metallurgical process is used to form the structure of the light-emitting diode, the equipment usage of the co-metallic process will have a higher standard, which will also increase the manufacturing cost.

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