Breakdown electric fuse structure and forming method thereof and semiconductor device
A technology of electric fuses and fuses, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as programming voltage instability, achieve uniform quality, improve performance, and ensure stability Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0079] Example two
[0080] Based on the above-mentioned breakdown type electric fuse structure, the present invention also provides a method for forming a breakdown type electric fuse structure. image 3 It is a schematic flowchart of a method for forming a breakdown type electric fuse structure in the second embodiment of the present invention. Such as image 3 As shown, the method for forming the breakdown type electric fuse structure includes:
[0081] In step S100, a substrate is provided, an isolation structure is formed in the substrate, the isolation structure surrounds an active region in the substrate, and the isolation structure covers the side surface of the active region.
[0082] Step S200, forming an insulating material layer on the substrate, the insulating material layer covering the top surface of the active region and extending to cover the isolation structure in the peripheral region of the active region, and in the The insulating material layer defines a breakdo...
Example Embodiment
[0104] Example three
[0105] Based on the above-mentioned breakdown type electric fuse structure, the present invention also provides a semiconductor device including the breakdown type electric fuse structure. For example, the semiconductor device is a memory.
[0106] Wherein, the memory further includes a storage unit. Optionally, the breakdown type electric fuse structure may be used to form a part of the storage unit of the memory to realize data storage. Specifically, the memory cell includes, for example, a selection transistor and the breakdown type electric fuse structure, and the breakdown type electric fuse structure is connected to the selection transistor.
[0107] When programming the selected memory cell, the select transistor corresponding to the selected memory cell is turned on, and a high voltage is input, and the high voltage is applied to the breakdown electric fuse structure, thereby causing breakdown The electric fuse structure is broken down, and the high ...
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap