Column replacement method and device based on NAND flash memory and NAND storage device

A storage device, flash memory technology, applied in the field of memory, can solve the problems affecting the reading and writing speed of the memory, and achieve the effect of speeding up the speed

Inactive Publication Date: 2018-09-14
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Embodiments of the present invention provide a column replacement method, device, and NAND storage device based on NAND flash memory to solve the problem in the prior art that the latch corresponding to the damaged column needs to be used as a relay to affect the read and write speed of the memory when performing column replacement.

Method used

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  • Column replacement method and device based on NAND flash memory and NAND storage device
  • Column replacement method and device based on NAND flash memory and NAND storage device
  • Column replacement method and device based on NAND flash memory and NAND storage device

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Embodiment 1

[0039] Figure 1A and Figure 1B It is a flow chart of a column replacement method based on NAND flash memory provided by Embodiment 1 of the present invention. This embodiment is applicable to the case of column replacement based on NAND flash memory and is applied to a NAND storage device. The storage device includes a core array, Redundant arrays, core array latches and redundant array latches, the method can be performed by a device having a column replacement function based on NAND flash memory, and the device can be implemented in software and / or hardware, such as for storage The firmware of the device.

[0040] The method provided by Embodiment 1 of the present invention specifically includes:

[0041] S110. When writing data, acquire a physical address of the data to be written.

[0042] Specifically, the NAND flash memory is a kind of flash memory, which belongs to a non-volatile storage device. The main function of the storage device is to store programs and vario...

Embodiment 2

[0071] figure 2 It is a schematic structural diagram of a column replacement device based on NAND flash memory in Embodiment 2 of the present invention, which is applied to a NAND storage device, and the storage device includes a core array, a redundant array, a core array latch, and a redundant array latch , the storage device also includes a bad address latch, a bad address lookup table is stored in the bad address latch, and the bad address lookup table stores the column address of the bad column in the core array;

[0072] Correspondingly, the device specifically includes:

[0073] The physical address obtaining module 210 is used to obtain the physical address of the data to be written when writing data, or obtain the physical address of the data to be read when reading data;

[0074] The column damage judging module 220 is used for judging whether the column corresponding to the physical address of the data to be written in the core array is damaged according to the ph...

Embodiment 3

[0082] image 3 It is a schematic structural diagram of a NAND storage device in Embodiment 3 of the present invention, as shown in the figure, including firmware 31, bad address latch 32, core array 33, redundant array 34, core array latch 35 and redundant The array latch 36 and the firmware 31 are respectively connected to the bad address latch 32 , the core array 33 , the redundant array 34 , the core array latch 35 and the redundant array latch 36 .

[0083] Wherein, a bad address lookup table is stored in the bad address latch 32, which stores the column address of the bad column in the core array 33 in the bad address lookup table; there can be multiple bad address latches 32, and each latch stores A column address of a bad column; the core array 33 is used to store data; the redundant array 34 is used to replace the core array to store data through column replacement when a bad column appears in the core array.

[0084] Correspondingly, the firmware 31 includes the col...

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PUM

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Abstract

An embodiment of the invention discloses a column replacement method and device based on NAND flash memory and a NAND storage device. The method is applied to the NAND storage device; the NAND storagedevice includes a core array, a redundant array, a core array latch, a redundant array latch and a bad address latch; the bad address latch is used for storing a bad address lookup table; the bad address lookup table stores column addresses of bad columns in the core array. The method comprises: upon data writing, acquiring physical addresses of data to be written; judging whether columns, in thecore array, corresponding to the physical addresses of the data to be written are damaged according to the physical addresses of the data to be written and the bad address lookup table; if yes, writing, through the redundant array latch, the data to be written into the redundant array according to the physical addresses of the data to be written. The column replacement method and device based onNAND flash memory and the NAND storage device according to an embodiment of the invention can provide higher reading-writing speed.

Description

technical field [0001] Embodiments of the present invention relate to memory technology, and in particular to a column replacement method and device based on NAND flash memory, and a NAND storage device. Background technique [0002] NAND flash memory is a kind of Flash memory, which belongs to non-volatile semiconductor memory. NAND flash memory includes many data blocks, and each data block is composed of many memory cells for reading and writing data. [0003] In NAND flash memory, in order to cope with process defects and ensure the reliability of NAND flash memory, it is usually necessary to place a redundant array next to the core array. When reading and writing data, if the core array corresponding to the selected physical address is damaged, a redundant array can be used instead. Specifically, when data is written, the data to be written needs to be loaded into the latch corresponding to the physical address of the core array first, if the column corresponding to t...

Claims

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Application Information

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IPC IPC(8): G06F3/06G11C16/26
CPCG06F3/06G06F3/0611G06F3/0679G06F2003/0697G11C16/26
Inventor 苏志强刘会娟李建新
Owner GIGADEVICE SEMICON (BEIJING) INC
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