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High-specific-surface-area atomic layer thick carbon nitride nanosheet and preparation method thereof

A high specific surface area, thick carbon nitride technology, applied in nanotechnology, chemical instruments and methods, nanotechnology and other directions for materials and surface science, can solve the problem of environmental pollution product purity, long preparation operation time, high production cost problem, to achieve the effect of low price, low cost and low production cost

Inactive Publication Date: 2018-09-21
WUHAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The preparation method of carbon nitride nanosheets mainly includes liquid phase ultrasonic exfoliation method (Zhang H, et al.Switchingoxygen reduction pathway by exfoliating graphitic carbon nitride for enhanced photocatalytic phenol degradation[J].Journal of Physical Chemistry Letters,2015,6,958) , chemical exfoliation method (Zhou Z, et al.Dissolution and liquid crystals phase of2D polymeric carbon nitride[J].Journal of the American Chemical Society, 2015,137,2179), thermal exfoliation method (Liu G, et al.Nature- inspired environmental "phosphorylation" boosts photocatalytic H2production over carbon nitrogenanosheets under visible-light irradiation[J].Angewandte Chemie International Edition, 2015,54,13561

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  • High-specific-surface-area atomic layer thick carbon nitride nanosheet and preparation method thereof
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  • High-specific-surface-area atomic layer thick carbon nitride nanosheet and preparation method thereof

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Embodiment 1

[0034] A high specific surface area atomic layer thick carbon nitride nanosheet and a preparation method thereof. It is characterized in that the steps of the preparation method are:

[0035] Step 1. According to the mass ratio of solid nitrogen source: metal salt is 1: (5-80), the solid nitrogen source and the metal salt are uniformly mixed to obtain a mixture.

[0036] Step 2. Put the mixture into a corundum crucible, then place the corundum crucible containing the mixture in a muffle furnace, and keep it warm at 530-550° C. for 1-3 hours to obtain an intermediate product.

[0037] Step 3, washing the intermediate product with deionized water for 3 to 5 times, separating the solid from the liquid, and drying the obtained solid at 80 to 120° C. for 8 to 10 hours to prepare atomic layer thick carbon nitride nanosheets with high specific surface area.

[0038] The solid nitrogen source is dicyandiamide.

[0039] The metal salt is a mixture a, and the mixture a is a mixture of...

Embodiment 2

[0042] A high specific surface area atomic layer thick carbon nitride nanosheet and a preparation method thereof. It is characterized in that the steps of the preparation method are:

[0043] Step 1. According to the mass ratio of solid nitrogen source: metal salt is 1: (40-110), the solid nitrogen source and the metal salt are uniformly mixed to obtain a mixture.

[0044] Step 2. Put the mixture into a corundum crucible, then place the corundum crucible containing the mixture in a muffle furnace, and keep it warm at 510-530° C. for 1-3 hours to obtain an intermediate product.

[0045] Step 3, washing the intermediate product with deionized water for 3 to 5 times, separating the solid from the liquid, and drying the obtained solid at 80 to 120° C. for 8 to 10 hours to prepare atomic layer thick carbon nitride nanosheets with high specific surface area.

[0046] The solid nitrogen source is diaminomaleonitrile.

[0047] The metal salt is a mixture b, and the mixture b is a mixt...

Embodiment 3

[0050] A high specific surface area atomic layer thick carbon nitride nanosheet and a preparation method thereof. It is characterized in that the steps of the preparation method are:

[0051] Step 1. According to the mass ratio of solid nitrogen source: metal salt is 1: (70-140), the solid nitrogen source and the metal salt are uniformly mixed to obtain a mixture.

[0052] Step 2. Put the mixture into a corundum crucible, then place the corundum crucible containing the mixture in a muffle furnace, and keep it warm at 490-510° C. for 2-4 hours to obtain an intermediate product.

[0053] Step 3, washing the intermediate product with deionized water for 3 to 5 times, separating the solid from the liquid, and drying the obtained solid at 80 to 120° C. for 8 to 10 hours to prepare atomic layer thick carbon nitride nanosheets with high specific surface area.

[0054] The solid nitrogen source is melamine.

[0055] The metal salt is a mixture c, the mixture c is KCl and ZnCl 2 A m...

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Abstract

The invention relates to a high-specific-surface-area atomic layer thick carbon nitride nanosheet and a preparation method thereof. According to the technical scheme, a solid nitrogen source and metalsalt is evenly mixed in the mass ratio of 1:(5-200), and a mixture is obtained; the mixture is put in a corundum crucible, then the corundum crucible with the mixture is put into a muffle furnace, and heat preservation is carried out for 1-5 hours at the temperature of 450-550 DEG C to obtain an intermediate product; the intermediate product is washed with deionized water 3-5 times, solid-liquidseparation is carried out, the obtained solid is dried at 80-120 DEG C for 8-10 hours, and the high-specific-surface-area atomic layer thick carbon nitride nanosheet is prepared. The method has the advantages that the process is simple, the reaction temperature is low, the production period is short, the cost is low, the process is easy to control, and the method is environmentally friendly; the specific surface area of the prepared high-specific-surface-area atomic layer thick carbon nitride nanosheet is large, the number of active sites is large, the purity is high, and application prospectsare good.

Description

technical field [0001] The invention belongs to the technical field of carbon nitride nanosheets. Specifically relates to a high specific surface area atomic layer thick carbon nitride nanosheet and a preparation method thereof. Background technique [0002] With the rapid development of modern industrialization, energy crisis and environmental pollution problems are becoming more and more serious. Semiconductor photocatalysis technology can convert solar energy into chemical energy under mild conditions, and can also oxidize and decompose organic pollutants, showing great potential in solving environmental pollution and energy shortages. However, traditional TiO 2 The low solar energy utilization rate, low photon quantum efficiency and easy deactivation of inorganic semiconductor-based photocatalysts seriously restrict the practical application of photocatalytic technology. Therefore, developing new high-efficiency photocatalysts and broadening the photoresponse range of...

Claims

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Application Information

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IPC IPC(8): C01B21/082B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01B21/0605C01P2002/72C01P2004/04C01P2006/12C01P2006/17
Inventor 梁峰李俊怡张海军田亮张俊王森董龙浩
Owner WUHAN UNIV OF SCI & TECH