A preparation method for high-voltage LED chips that increases the ratio of light-emitting surfaces

Abstract

The invention provides a high-voltage LED chip preparation method capable of increasing the proportion of a light-emitting surface. The preparation method includes the following steps that: step 1) adeep etching groove with a steep sidewall is etched on a substrate through using a first mask with a steep sidewall; and step 2) a gentle slope portion is etched on a portion of the deep etching groove through using a second mask with a gentle sidewall, wherein the portion of the deep etching groove requires metal bridging. With the high-voltage LED chip preparation method of the invention adopted, normal metal connection at the slope can be ensured, a light-emitting area can be maximized, and therefore, the performance of chips can be improved; actually increased light-emitting area depends on the size of the chips and the number of the times of the series connection of the chips, the larger the number of the times of the series connection is, the more the light-emitting area is increased; and in general, the light-emitting area can be increased by 10 to 30%, brightness can be increased by 3 to 10%, a voltage can be decreased by 0.03 to 0.1V, and service life test light decay is reduced by 1.3%.

Description

technical field [0001] The invention relates to the field of LED chip manufacturing, in particular to a method for preparing a high-voltage LED chip that increases the proportion of a light-emitting surface. Background technique [0002] High-voltage (HV) LED chips emit light in series in the LED chip preparation section, reducing the number of welding wires in downstream packaging factories, improving their production efficiency and saving costs, and the reliability of the package increases with the reduction in the number of welding wires. promote. [0003] To achieve series connection of high-voltage chips, GaN must be divided into several units, and the units must be insulated. This is the biggest difference between high-voltage chips and ordinary chips. At present, the high-voltage chip is divided by the method of dry etching GaN with photoresist mask. In order to ensure that the insulating layer and metal can be well attached to the side wall of the etched trench, the...

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Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a high-voltage LED chip preparation method that increases the proportion of the light-emitting surface, which is used to solve the problem of excessively large proportion of the groove area of ​​the high-voltage chip and the loss of the light-emitting surface in the prior art. The problem

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