Semiconductor structures and methods of forming them
A semiconductor and sidewall structure technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of poor isolation performance and affecting the performance of semiconductor structures, and achieve the effect of improving performance
Active Publication Date: 2020-09-08
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
[0003] However, during the gate-last process, the metal material of the metal gate deteriorates the isolation performance of the dielectric layer in the semiconductor structure, thus affecting the performance of the semiconductor structure
Method used
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[0027] As mentioned in the background, the isolation performance of the dielectric layer in the semiconductor structure is not good.
[0028] Figure 1 to Figure 2 It is a structural schematic diagram of each step of a method for forming a semiconductor structure.
[0029] Please refer to figure 1 , providing a substrate, the substrate includes a first region A and a second region B, the first region A has a first dummy gate structure 101 on the substrate, and the first dummy gate structure 101 includes a first dummy gate side wall 102 and a first dummy gate layer (not shown in the figure), the top surface of the first dummy gate structure 101 has a first mask layer (not shown in the figure), and the second region B on the substrate There is a second dummy gate structure 103, the second dummy gate structure 103 includes a second dummy gate spacer 104 and a second dummy gate layer (not shown in the figure), the second dummy gate structure 103 There is a second mask layer (no...
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Abstract
The invention provides a semiconductor structure and a formation method therefor. The method includes the following steps: a substrate, the substrate has a device structure, the device structure includes an initial side wall structure; an initial first dielectric layer is formed on the substrate, and the device structure and the initial side wall structure; the initial first dielectric layer is flatted, and the first dielectric layer is formed; a side wall structure is formed by removing part of the initial side wall structure, and the top surface of the side wall structure is lower than or flush with the lowest point of the top surface of the first dielectric layer; after the side wall structure is formed, an initial second dielectric layer is formed by compacting the first dielectric layer, the bottom surface of the initial second dielectric layer is lower than the top surface of the side wall structure, and the density of the initial second dielectric layer is larger than the density of the first dielectric layer; after the initial second dielectric layer is formed, an opening structure is formed by removing the device structure, and a material layer is formed in the opening structure and on the initial second dielectric layer; the material layer and the initial second dielectric layer are flatted until the top surface of the side wall structure is exposed, and grid structures and the second dielectric layer are formed. The second dielectric layer has a good isolation property.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the reduction of technology nodes, the traditional gate dielectric layer continues to become thinner, and the leakage of transistors increases accordingly, causing problems such as waste of power consumption of semiconductor devices. In order to solve the above problems, the prior art provides a solution of replacing the polysilicon gate with a metal gate. Among them, the gate last process is a main process for forming the metal gate. [0003] However, during the gate-last process, the metal material of the metal gate deteriorates the isolation performance of the dielectric layer in the semiconductor structure, thus affecting the performance of the semiconductor structure. Contents of the invention [0004] The technical problem solved by the invention is to provide ...
Claims
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IPC IPC(8): H01L21/28H01L29/423H01L21/336H01L29/78
CPCH01L21/28247H01L29/42364H01L29/66795H01L29/7853H01L29/7855
Inventor 韩秋华
Owner SEMICON MFG INT (SHANGHAI) CORP