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Semiconductor wafer electroplating device

A technology of electroplating equipment and semiconductors, applied in the direction of electrolysis process, electrolysis components, etc., can solve the problems of inconsistent plating uniformity of wafers, etc., achieve the effect of improving adsorption effect, improving efficiency, and ensuring smooth progress

Active Publication Date: 2018-09-28
江苏爱矽半导体科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to make up for the deficiencies of the prior art, the present invention proposes a semiconductor wafer electroplating equipment, which is mainly used to solve the problem of inconsistency in wafer electroplating uniformity

Method used

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  • Semiconductor wafer electroplating device
  • Semiconductor wafer electroplating device
  • Semiconductor wafer electroplating device

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Embodiment Construction

[0023] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific embodiments.

[0024] Such as Figure 1 to Figure 4 As shown, a semiconductor wafer electroplating device according to the present invention includes a reaction chamber 1, a magnetic ring 2, a wafer 3, a holder 4 and a permanent magnet 5, the reaction chamber 1 is cylindrical, and the wafer 3 The electroplating reaction is carried out in the reaction chamber 1. The upper part of the reaction chamber 1 is provided with a liquid inlet, and the bottom of the reaction chamber 1 is provided with a liquid outlet. The liquid outlet and the liquid inlet are connected by a pump and a hose to realize the electroplating solution. recycling; the magnetic ring 2 is horizontally fixed in the reaction chamber 1, and the magnetic ring 2 is evenly arranged in multiple layers in ...

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Abstract

The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a semiconductor wafer electroplating device. The device comprises a reaction cavity, magnetic rings, wafers, holders and permanent magnets, wherein the wafers are subjected to electroplating reaction in the reaction cavity; the magnetic rings are horizontally fixed in the reaction cavity, and aplurality of layers of magnetic rings are uniformly arranged in the reaction cavity; two wafers form one pair and the two wafers are symmetrically arranged up and down, the wafers are arranged abovethe magnetic rings, one pair of the wafers are connected through one holder, and the edges of the upper wafer and the lower wafer of one pair are sealed through a sealing plate; one holder is locatedin a closed space of the corresponding pair of wafers; the permanent magnets are arranged inside the holders, the permanent magnets and the magnetic rings generate acting force opposite to the direction of the wafers, so that the suspension of the wafers above the magnetic rings is realized, the wafers are suspended in the electroplating solution, and the uniformity of electroplating is ensured. According to the semiconductor wafer electroplating device, the electroplating of the wafers is completed by suspending the wafers in the electroplating solution, and the uniformity of the electroplating layer is good; and meanwhile, batch electroplating can be realized, and the working efficiency is high.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, in particular to a semiconductor wafer electroplating equipment. Background technique [0002] Wafer (Wafer) refers to the silicon wafer used in the production of silicon semiconductor integrated circuits. Because of its circular shape, it is called a wafer. Electroplate a layer of conductive metal on the wafer, and process the conductive metal layer to make conductive lines. Electroplating is one of the key processes for making these metal layers. Wafer electroplating is to place the wafer in the electroplating solution, apply the voltage negative electrode to the thin metal layer (seed layer) prefabricated on the wafer, and apply the voltage positive electrode to the On the soluble or insoluble anode, the metal ions in the plating solution are deposited on the surface of the wafer through the action of an electric field. [0003] With the development of semiconductor techn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D17/00
CPCC25D17/001
Inventor 李涵孙勇
Owner 江苏爱矽半导体科技有限公司
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