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Sapphire pattern substrate structure capable of improving luminous efficiency of GaN-based LED

A technology of sapphire substrate and pattern substrate, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of GaN material crystal quality degradation, difficulty in large-scale production, and lattice mismatch, so as to improve luminous efficiency and improve Effect of material quality, commercially important value

Pending Publication Date: 2018-09-28
ZHEJIANG UNIV
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Problems solved by technology

However, the single graphic structure of the graphic substrate of the invention is in the shape of a truncated cone, while the single graphic structure of the graphic substrate in mass production is mostly approximately conical, which is difficult to be used in mass production
In addition, due to the lattice mismatch between the mirror material and the sapphire substrate, the quality of the mirror material itself and the GaN material crystal grown on the mirror will be degraded

Method used

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  • Sapphire pattern substrate structure capable of improving luminous efficiency of GaN-based LED

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Embodiment Construction

[0017] Such as figure 1 As shown, the sapphire pattern substrate structure for improving the luminous efficiency of GaN-based LEDs in the present invention includes a sapphire pattern substrate 4 and a sandwich reflective structure deposited on the sapphire pattern substrate 4, and the sandwich reflective structure includes a sapphire pattern substrate deposited on the sapphire pattern substrate 4. The first Al on the graphics substrate 4 2 o 3 Multilayer structure 3, deposited on the first Al 2 o 3 The Bragg reflector 2 on the multilayer structure 3, and the second Al deposited on the Bragg reflector 2 2 o 3 Multilayer structure 1.

[0018] The invention proposes a sapphire pattern substrate structure for improving the luminous efficiency of GaN-based LEDs. The purpose is to increase the function of the reflector and improve the quality of material crystals, thereby improving the luminous efficiency of the LED. The specific implementation steps are as follows:

[0019]...

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Abstract

The invention discloses a sapphire pattern substrate structure capable of improving the luminous efficiency of a GaN-based LED. The sapphire pattern substrate structure comprises: a sapphire pattern substrate and a sandwich reflection structure deposited on the sapphire pattern substrate. The sandwich reflection structure consists of a first Al2O3 multilayer structure deposited on the sapphire pattern substrate, a Bragg reflector deposited on the first Al2O3 multilayer structure, and a second Al2O3 multilayer structure deposited on the Bragg reflector. Therefore, the quality of the GaN-based LED material and the luminous efficiency of the GaN-based LED are improved. The sapphire pattern substrate structure has the great commercial value.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a sapphire pattern substrate structure for improving the luminous efficiency of GaN-based LEDs. Background technique [0002] GaN-based LEDs are now widely used in general lighting, traffic signal indication, display screens, and backlights. Compared with traditional light sources, GaN-based LEDs have significant advantages such as high photoelectric conversion efficiency, long life, low loss, and no pollution. In the large-scale production of GaN-based LEDs, improving light efficiency and reducing costs are always the goals that are always pursued. With the continuous expansion of production scale, production costs are also continuously reduced. In terms of improving light efficiency, many key technologies have been widely used in large-scale production, such as graphic substrate technology, buffer layer technology, high light efficiency quantum well technolo...

Claims

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Application Information

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IPC IPC(8): H01L33/12H01L33/22H01L33/46H01L33/00
CPCH01L33/0066H01L33/0075H01L33/12H01L33/22H01L33/46
Inventor 孙一军程志渊周强孙颖孙家宝刘艳华王妹芳盛况
Owner ZHEJIANG UNIV
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