A kind of ultra-low dielectric loss high dielectric constant ceramic dielectric material and preparation method thereof

Abstract

The invention provides a (Eu0.5Nb0.5)0.01Ti0.99O2 ultralow-dielectric loss high-dielectric constant ceramic dielectric material added with Bi2O3 and a preparation method thereof. The stoichiometric equation is xwt%Bi2O3-(100-x)wt%(Eu0.5Nb0.5)0.01Ti0.99O2, wherein x is more than 0 and less than or equal to 3. The preparation method comprises the following steps: batching according to the chemical composition, mixing, drying, screening, pre-sintering, performing secondary wet milling, cold isostatic pressing, sintering into ceramics, silver firing and performing other processes, so as to obtainthe ultralow-dielectric loss high-dielectric constant ceramic dielectric material. The dielectric material prepared in the invention has the dielectric constant of more than 25000 and minimum dielectric loss of 0.015, and has excellent frequency (20-106Hz) and temperature stability (150 DEG C below zero to 200 DEG C). The dielectric material prepared in the invention has high practicality, and canbe applied to the microelectronic industry, particularly dynamic random access memory and high dielectric ceramic capacitors.

Description

technical field [0001] The invention belongs to the field of electronic ceramics, is applied to electronic components, and relates to an ultra-low dielectric loss high dielectric constant ceramic dielectric material and a preparation method thereof. Background technique [0002] With the rapid development of the microelectronics industry, the requirements for the miniaturization, integration and intelligence of ceramic capacitors are getting higher and higher. Ceramic capacitors are widely used in dynamic random access memory (DRAM) because of their advantages such as wide operating temperature range, long life, and reliable performance. DRAM is the most widely used semiconductor memory in computers. Dielectric materials with high dielectric constant can further enhance the storage density of DRAM, thereby increasing the degree of integration. Codoping TiO using trivalent and pentavalent ions 2 at 20-10 6 Hz frequency and high dielectric constant in the temperature range...

AI Technical Summary

Problems solved by technology

[0004] Aiming at the problems existing in the prior art, the present invention provides a ceramic dielectric material with ultra-low dielectric loss and high dielectric constant and its preparation method, which solves the problem of relatively large dielectric loss of ceramic dielectric materials

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