Acquisition module applied to high-voltage power supply
A technology of acquisition module and high-voltage power supply, applied in the field of acquisition module of high-voltage power supply, can solve the problems of high damage probability of high-voltage package, low acquisition accuracy, low stability, etc.
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Embodiment 1
[0031] Embodiment 1 of the present invention provides an acquisition module applied to a high-voltage power supply. The acquisition module applied to a high-voltage power supply includes a signal transmission unit, a voltage signal acquisition unit, and a current signal acquisition unit;
[0032] Signal transmission unit: used to connect the output terminal of the high-voltage package, and transmit the voltage and current signals output by the high-voltage package to the voltage signal acquisition unit and the current signal acquisition unit;
[0033] Voltage signal acquisition unit: connected to the signal transmission unit, used to collect the voltage signal transmitted by the signal transmission unit;
[0034] Current signal acquisition unit: connected to the signal transmission unit, used to collect the current signal transmitted by the signal transmission unit.
[0035]The signal transmission unit includes a connector XS1 for connecting a high-voltage package (belonging t...
Embodiment 2
[0039] The acquisition module applied to the high-voltage power supply provided by Embodiment 2 of the present invention is basically the same as Embodiment 1, the difference is that, as figure 2 As shown, the acquisition module applied to a high-voltage power supply also includes a data storage unit connected to the voltage signal acquisition unit and the current signal acquisition unit, and the data storage unit includes a field effect transistor T1, a field effect transistor T2, a capacitor C3 and a capacitor C4; the gate G of the field effect transistor T1 is connected to the second end of the resistor R1, the source S is connected to the first end of the capacitor C3, the drain D is connected to the signal output end, and the first end of the capacitor C3 is connected. Both ends are grounded; the gate G of the field effect transistor T2 is connected to the second end of the resistor R2, the source S is connected to the first end of the capacitor C4, the drain D is connect...
Embodiment 3
[0042] The acquisition module applied to the high-voltage power supply provided by Embodiment 3 of the present invention is basically the same as Embodiment 2, the difference is that, as image 3 As shown, the data storage unit also includes a field effect transistor T3, a field effect transistor T4, a field effect transistor T5 and a field effect transistor T6; the source S of the field effect transistor T3, the gate of the field effect transistor T4 G and the drain D of the field effect transistor T5 are connected to the drain D of the field effect transistor T1, the gate G of the field effect transistor T3, the drain D of the field effect transistor T4 and the field effect transistor T4 The source S of the field effect transistor T6 is connected to the drain D of the field effect transistor T2, and the drain D of the field effect transistor T3 is connected to the source S of the field effect transistor T4. The gate G and source S of T5 and the gate G and drain D of the fiel...
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