Carbon nitride/nitrogen-doped hollow mesoporous carbon/bismuth trioxide ternary z-type photocatalyst and preparation method thereof

Abstract

The invention discloses a carbon nitride / nitrogen doped hollow mesoporous carbon / bismuth trioxide ternary Z-type photocatalyst, and a preparation method thereof. According to the preparation method, graphite phase carbon nitride is taken as a carrier, the surface of the carrier is modified with nitrogen doped hollow mesoporous carbon and bismuth trioxide. The preparation method comprises followingsteps: melamine, bismuth nitrate pentahydrate, and nitrogen doped hollow mesoporous carbon are dispersed in ethanol through ultrasonic dispersion, heating and continuous stirring are carried out until complete ethanol volatilization is achieved so as to obtain a photocatalyst precursor mixture; calcining is carried out so as to obtain the carbon nitride / nitrogen doped hollow mesoporous carbon / bismuth trioxide ternary Z-type photocatalyst. The carbon nitride / nitrogen doped hollow mesoporous carbon / bismuth trioxide ternary Z-type photocatalyst is excellent in light absorbing capacity, low in photo-induced electron-cavity recombination rate, excellent in photocatalysis performance, and high in stability, is a novel photocatalysis material. The preparation method is simple; the conditions areeasy to control; the cost is low; and the preparation method is suitable for large-scale industrialized production.

Description

technical field [0001] The invention belongs to the technical field of photocatalysis, and relates to a carbon nitride / nitrogen-doped hollow mesoporous carbon / bismuth trioxide ternary Z-type photocatalyst and a preparation method thereof. Background technique [0002] With the continuous development of society, the problems of water pollution and shortage are becoming more and more obvious, and it is urgent to find an energy-saving, environmentally friendly and efficient water pollution control technology to solve these problems. Photocatalytic technology is to purify pollutants through the redox ability of semiconductor photocatalysts under light conditions, and has shown good application prospects. In recent years, graphitic carbon nitride (g-C 3 N 4 ) as a non-metallic semiconductor photocatalyst has attracted extensive attention due to its suitable energy band position, stable chemical performance, low cost and easy preparation. Theoretically g-C 3 N 4 The energy ga...

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Problems solved by technology

Studies have shown that g-C 3 N 4 with Bi 2 o 3 It can be combined to form a binary Z-type heterojunction structure, but there are still problems such as weak light absorption ability, slow photogenerated electron-hole separation rate, poor stability (easy to precipitate), etc., which seriously limit the improvement of photocatalytic performance.

Therefore, how to comprehensively improve the problems of weak light absorption ability, slow photogenerated electron-hole separation rate, and poor photocatalytic performance in existing heterojunction materials, and obtain a light-absorbing ability, low photogenerated electron-hole recombination rate, and photocatalytic Composite photocatalysts with high catalytic performance and good stability and the corresponding preparation methods with simple process, easy control of conditions and low cost are of great significance for further expanding the application range of photocatalytic technology

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