Method for detecting air impermeability of transistor
A technology of sealing detection and transistor, which is applied in the direction of using liquid/vacuum to measure liquid tightness and detecting the appearance of fluid at the leakage point, etc., can solve problems such as circuit damage and performance degradation, and achieve the effect of saving loss
Inactive Publication Date: 2018-11-16
ANQING JINGKE ELECTRONICS CO LTD
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Problems solved by technology
Once the transistor leaks, not only the performance will be reduced, but also the risk of circuit damage may be caused. Therefore, the transistor must be tested for airtightness before leaving the factory.
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Embodiment Construction
[0015] refer to figure 1 , a transistor seal detection method proposed by the present invention, comprising the following steps.
[0016] S1. Place the transistor to be tested in a sealed container, and then vacuumize the sealed container. In this step, through the negative pressure environment in the sealed container, if the transistor leaks, the inside of the transistor is also evacuated; on the contrary, if the sealing of the transistor is qualified, the negative pressure environment in the sealed container will not have any impact on the transistor.
[0017] S2. Fill the airtight container with alcohol gas until the pressure inside the airtight container reaches a preset first threshold. During this step, if the transistor leaks, alcohol gas will also enter the transistor as the air pressure inside the sealed container rises.
[0018] S3. Exhausting air while inputting air into the sealed container until the alcohol content in the sealed container reaches a preset first ...
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A method for detecting the air impermeability of a transistor according to the present invention comprises the following steps of S1, placing a transistor to be detected in a sealed container and thenvacuumizing the sealed container; S2, filling the sealed container with an alcohol gas until the pressure inside the sealed container reaches a preset first threshold; S3, exhausting air while inputting air into the sealed container until the alcohol content in the sealed container reaches a preset first concentration value, wherein the pressure in the sealed container is always maintained at thefirst threshold in this process; S4, heating the sealed container for a preset first time threshold, then re-detecting the alcohol content in the sealed container and recording the alcohol content asa second concentration value; S5, comparing the second concentration value with the first concentration value, and determining the air impermeability of the transistor to be detected based on a comparison result. In the present invention, when the transistor is detected, it is not necessary to directly contact the transistor, which is advantageous for saving unnecessary loss of the transistor.
Description
technical field [0001] The invention relates to the technical field of leak detection, in particular to a transistor seal detection method. Background technique [0002] A transistor is a very common electronic component with a wide range of applications. Once the transistor leaks, not only the performance will be reduced, but also the risk of circuit damage may be caused. Therefore, the transistor must be tested for airtightness before leaving the factory. Contents of the invention [0003] Based on the technical problems existing in the background technology, the present invention proposes a transistor sealing detection method. [0004] A kind of transistor sealing detection method that the present invention proposes, comprises the following steps: [0005] S1. Place the transistor to be detected in a sealed container, and then vacuumize the sealed container; [0006] S2. Filling the airtight container with alcohol gas until the pressure inside the airtight container ...
Claims
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IPC IPC(8): G01M3/20
CPCG01M3/20
Inventor 达令项钰
Owner ANQING JINGKE ELECTRONICS CO LTD