Wafer processing method
A processing method and wafer technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of high energy consumption and high cost, and achieve the effects of improving production efficiency, saving production costs, and reducing time.
Active Publication Date: 2018-11-23
GOERTEK INC
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Problems solved by technology
[0004] In view of the above problems, the purpose of the present invention is to provide a wafer processing method to solve the problems of large energy consumption and high cost in traditional wafer processing methods.
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[0029] In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of one or more embodiments. It may be evident, however, that these embodiments may be practiced without these specific details.
[0030] Aiming at the problems of high energy consumption and high cost in the traditional wafer processing method proposed above, the present invention provides a wafer processing method.
[0031] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0032] In order to illustrate the wafer processing method provided by the present invention, figure 1 The process flow of the wafer processing method according to the embodiment of the present invention is shown.
[0033] Such as figure 1 As shown, the wafer processing method provided by the present invention includes:
[0034] S110: Coating magnetic particles on the surface of...
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The invention provides a wafer processing method. The wafer processing method comprises the following steps of coating the surface of a bearing wafer with magnetic particles; enabling a to-be-processed wafer to be bonded on the bearing wafer which is coated with the magnetic particles, wherein a metal curing layer is formed between the bonded to-be-processed wafer and the bearing wafer, and the magnetic particles are located between the bearing wafer and the to-be-processed wafer; processing the to-be-processed wafer, wherein the processed wafer is a finished wafer; placing a magnet below thebearing wafer, and enabling the magnet to move to drive the magnetic particles to generate displacement, so that the magnetic particles cut the metal curing layer, and a gap is formed between the bearing wafer and the finished wafer; enabling laser to irradiate on the finished wafer, so that the finished wafer is stripped from the bearing wafer. By means of the method, the problems of high energyconsumption, high cost and the like of the traditional wafer processing method can be solved.
Description
technical field [0001] The present invention relates to the technical field of semiconductors, and more specifically, to a wafer processing method. Background technique [0002] In recent years, as semiconductor devices continue to respond to the needs of "faster, cheaper, and smaller", in order to meet manufacturing needs, thinning wafers has become the general trend. However, ultra-thin device wafers are flexible and fragile, and are easy to warp. curves and undulations, so a support system is needed to make the process run smoothly. In this context, temporary bonding / debonding technology came into being. The wafer to be processed is bonded to the wafer to be processed, and the wafer to be processed is processed after bonding. Due to the reinforcement of the wafer to be processed, the wafer to be processed is not easy to warp and undulate. After the processing of the wafer to be processed is completed, the wafer to be processed is separated from the carrier wafer. Tradi...
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IPC IPC(8): H01L21/683
CPCH01L21/6835H01L2221/68386H01L2221/68318
Inventor 牛小龙徐相英姜晓飞
Owner GOERTEK INC