Wafer Processing Method
A processing method and wafer technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of high energy consumption and high cost, and achieve the effects of improving production efficiency, saving production costs, and reducing time.
Active Publication Date: 2022-04-19
GOERTEK INC
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Problems solved by technology
[0004] In view of the above problems, the purpose of the present invention is to provide a wafer processing method to solve the problems of large energy consumption and high cost in traditional wafer processing methods.
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[0029] In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of one or more embodiments. It may be evident, however, that these embodiments may be practiced without these specific details.
[0030] Aiming at the problems of high energy consumption and high cost in the traditional wafer processing method proposed above, the present invention provides a wafer processing method.
[0031] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0032] In order to illustrate the wafer processing method provided by the present invention, figure 1 The process flow of the wafer processing method according to the embodiment of the present invention is shown.
[0033] Such as figure 1 As shown, the wafer processing method provided by the present invention includes:
[0034] S110: Coating magnetic particles on the surface of...
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Abstract
The invention provides a wafer processing method, comprising: coating magnetic particles on the surface of a carrier wafer; bonding the wafer to be processed on the carrier wafer coated with magnetic particles, wherein the bonded wafer to be processed A solidified metal layer is formed between the wafer and the carrier wafer, and the magnetic particles are located between the carrier wafer and the wafer to be processed; the wafer to be processed is processed, and the processed wafer is a finished wafer; A magnet is placed under the magnet, and the magnet moves and drives the magnetic particles to generate displacement, so that the magnetic particles cut the metal solidified layer, and a gap appears between the carrier wafer and the finished wafer; the laser is irradiated on the finished wafer, so that the finished wafer The circle is peeled from the carrier wafer. The invention can solve the problems of large energy consumption and high cost in the traditional wafer processing method.
Description
technical field [0001] The present invention relates to the technical field of semiconductors, and more specifically, to a wafer processing method. Background technique [0002] In recent years, as semiconductor devices continue to respond to the needs of "faster, cheaper, and smaller", in order to meet manufacturing needs, thinning wafers has become the general trend. However, ultra-thin device wafers are flexible and fragile, and are easy to warp. curves and undulations, so a support system is needed to make the process run smoothly. In this context, temporary bonding / debonding technology came into being. The wafer to be processed is bonded to the wafer to be processed, and the wafer to be processed is processed after bonding. Due to the reinforcement of the wafer to be processed, the wafer to be processed is not easy to warp and undulate. After the processing of the wafer to be processed is completed, the wafer to be processed is separated from the carrier wafer. Tradi...
Claims
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IPC IPC(8): H01L21/683
CPCH01L21/6835H01L2221/68386H01L2221/68318
Inventor 牛小龙徐相英姜晓飞
Owner GOERTEK INC