Electrostatic protection device

Abstract

The invention provides an electrostatic protection device comprising a substrate, a deep N trap is arranged in the substrate, a first N trap, a first P trap and a second N trap are sequentially arranged in the deep N trap from left to right, a first N+ injection region, a first P+ injection region and a second N+ injection region are arranged in the first N trap, the second N+ injection region isbridged between the first N trap and the first P trap, a third N+ injection region, a second P+ injection region and a fourth N+ injection region are arranged in the first P trap, a fifth N+ injectionregion, a third P+ injection region and a sixth N+ injection region are arranged in the second N trap, the fifth N+ injection region is bridged between the first P trap and the second N trap, the first N trap, the first P trap, and the second N trap form a first NPN structure, the second N+ injection region, the first P trap and the third N+ injection region form a second NPN structure. Accordingto the electrostatic protection device, the voltage can be maintained, the trigger voltage can be reduced, and the electrostatic discharge capacity can be enhanced.

Description

technical field [0001] The invention relates to the technical field of electrostatic protection for integrated circuits, in particular to an electrostatic protection device. Background technique [0002] In all links of integrated circuits, charge accumulation may occur. Under certain conditions, the charge will be transferred, and the instantaneous large current may exceed the critical value of the device and cause the chip to burn. Statistical data show that: Electro Static Discharge (ESD) is the main cause of failure of integrated circuits, especially in power integrated circuits. Therefore, electrostatic discharge has become the most important issue for designers. [0003] In order to reduce the economic loss caused by electrostatic discharge in integrated circuits, the most effective method is to design corresponding ESD protection devices with high performance ratio for each input and output port of integrated circuits. At present, ESD protection measures for conven...

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Problems solved by technology

[0005] In view of the above-mentioned situation, the object of the present invention is to solve the problem that in the prior art, the existing SCR device is difficult to achieve high sustain voltage characteristics in its limited layout area and affects the actual protection effect in practical applications.

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