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Device for purifying trichlorosilane

A technology of trichlorosilane and silicon tetrachloride, applied in the direction of silicon compounds, halogenated silanes, halogenated silicon compounds, etc., can solve the problem of high impurity content of trichlorosilane

Pending Publication Date: 2018-12-07
CHINA SILICON CORP LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to provide a device for purifying trichlorosilane to solve the technical problem of high trichlorosilane impurity content in the prior art

Method used

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  • Device for purifying trichlorosilane
  • Device for purifying trichlorosilane
  • Device for purifying trichlorosilane

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] use figure 1 The process shown, using figure 2 In the shown device, the reactor is a microchannel continuous flow reactor, and the specific test parameters are shown in Table 1.

[0041] Table 1

[0042]

[0043] In this example, the content of methyldichlorosilane in the trichlorosilane raw material is 20ppm, the content of B is 0.5ppb, and the content of P is 1.0ppb. Under the above conditions, the content of methyldichlorosilane in the product trichlorosilane is 2ppm, and the content of B impurities The content is 0.23ppb, and the P impurity content is 0.35ppb.

Embodiment 2

[0045] use figure 1 The process shown, using figure 2 In the shown device, the reactor is a microchannel continuous flow reactor, and the specific test parameters are shown in Table 2.

[0046] Table 2

[0047]

[0048] In this example, the content of methyldichlorosilane as a raw material for trichlorosilane is 20ppm, the content of B is 0.5ppb, and the content of P is 1.0ppb. Under the above conditions, the content of methyldichlorosilane in the product trichlorosilane product is 1.2ppm, and the content of B The impurity content is 0.1ppb, and the P impurity content is 0.21ppb.

Embodiment 3

[0050] use figure 1 The process shown, using figure 2 In the shown device, the reactor is a microchannel continuous flow reactor, and the specific test parameters are shown in Table 3.

[0051] table 3

[0052]

[0053] In this example, the content of methyldichlorosilane as a raw material for trichlorosilane is 20ppm, the content of B is 0.5ppb, and the content of P is 1.0ppb. Under the above conditions, the content of methyldichlorosilane in the product trichlorosilane is 0.2ppm, and the content of B The impurity content is 0.15ppb, and the P impurity content is 0.17ppb.

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Abstract

The invention discloses a device for purifying trichlorosilane. The device comprises a reactor, a solid-liquid separator and a rectifying tower, wherein the reactor is used for performing disproportionation reaction on trichlorosilane raw material containing dichloromethylsilane, silicon tetrachloride and oxygen under a catalytic effect of catalyst; the solid-liquid separator is used for performing solid-liquid separation on the reaction product discharged from the reactor; the rectifying tower is used for removing impurities, light components and heavy components from the liquid reaction product discharged from the solid-liquid separator. According to a reaction rectifying technology adopting the technical scheme of the invention, methyl trichlorosilane is acquired through disproportionation reaction of dichloromethylsilane in the raw material and silicon tetrachloride, trace oxygen, B and P are introduced and converted into a complex with high boiling point, the product is separatedin the manner of rectification and the high-purity trichlorosilane is finally acquired.

Description

technical field [0001] The invention relates to the field of chemical industry, in particular to a device for purifying trichlorosilane. Background technique [0002] High-purity trichlorosilane is the raw material for the production of electronic-grade polysilicon by the modified Siemens method. Electronic-grade polysilicon is further used in integrated circuit wafers. In addition, in the chip manufacturing process, high-purity trichlorosilane is also used for epitaxial deposition of silicon substrates. The material, therefore, has high requirements on the purity and impurities of trichlorosilane. At present, trichlorosilane is mainly directly synthesized by metal silicon and HCl, or silicon tetrachloride is produced as a by-product during the reduction of polysilicon, and metal silicon is used to react with HCl and silicon tetrachloride to generate trichlorosilane. In the process, impurities such as carbon, B, and P will be introduced from the raw material end, and the ab...

Claims

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Application Information

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IPC IPC(8): C01B33/107
CPCC01B33/10731C01B33/10778C01P2006/80
Inventor 刘见华赵雄万烨严大洲赵宇常欣
Owner CHINA SILICON CORP LTD
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