Detection method of field effect transistor biosensors enhanced by AUNPS
A field-effect transistor and biosensor technology, applied in the field of biological detection, can solve the problem of low detection sensitivity of field-effect transistor chips, and achieve the effect of improving detection sensitivity and changing carrier concentration
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specific Embodiment approach 1
[0045] Specific embodiment one: the following combination figure 1 The present embodiment will be specifically described. A preparation method of a field effect transistor biosensor reinforced with gold nanoparticles in this embodiment is carried out according to the following steps:
[0046] 1. Fabrication of transistor structure:
[0047] a. Silicon substrate cleaning:
[0048] The silicon wafer is cleaned to obtain a silicon substrate (1);
[0049] b. Thermal oxidation growth of SiO 2 As an insulating layer:
[0050] The silicon substrate (1) is successively subjected to dry oxygen oxidation, wet oxygen oxidation and dry oxygen oxidation, and is specifically carried out according to the following steps: under the condition that the temperature is 1050° C. to 1055° C. and the airflow velocity is 24 cm / sec to 26 cm / sec Under the conditions of dry oxygen oxidation for 4min~6min, and then under the condition of temperature of 1050℃~1055℃ and air velocity of 0.8cm / sec~1.2cm...
specific Embodiment approach 2
[0076] Specific implementation mode 2: Combining figure 1 This embodiment is specifically described. The difference between this embodiment and the first embodiment is that the gold nanoparticle-enhanced field effect transistor biosensor obtained in step 4 is composed of a silicon substrate (1), an oxide layer (2), and a metal gate. (3), a gate insulating layer (4), a graphene conductive channel layer (5) and a set of source and drain electrodes (6);
[0077] An oxide layer (2) is arranged on the silicon substrate (1), a metal gate (3) is arranged on the oxide layer (2), a gate insulating layer (4) is arranged outside the metal gate (3), and the gate insulating layer (4) completely covering the metal gate (3), a graphene conductive channel layer (5) is provided on the gate insulating layer (4), and a group of source and drain electrodes (6) are provided on the graphene conductive channel layer (5). ), and capture antibody molecules are immobilized on the graphene conductive c...
specific Embodiment approach 3
[0078] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: in step 1b, the silicon substrate (1) is subjected to dry oxygen oxidation, wet oxygen oxidation and dry oxygen oxidation in sequence, specifically according to the following steps Carry out: under the condition that the temperature is 1052℃~1055℃ and the air velocity is 25cm / s~26cm / s, dry oxygen oxidation is 5min~6min, then the temperature is 1052℃~1055℃ and the air velocity is 1cm / Under the condition of 1.2 cm / s to 1.2 cm / s, wet oxygen oxidation is performed for 6 min to 7 min, and finally, under the condition of temperature of 1052 ° C to 1055 ° C and air velocity of 25 cm / s to 26 cm / s, dry oxygen oxidation is carried out for 5 min to 6 min. An oxide layer (2) is obtained; the thickness of the oxide layer (2) is 500 nm to 520 nm. Others are the same as in the first or second embodiment.
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