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An oxidation reaction device for preparing electronic grade hydrogen fluoride

An oxidation reaction, hydrogen fluoride technology, applied in hydrogen fluoride, fluorine/hydrogen fluoride and other directions, can solve the problems of fluorine gas with high toxicity, leakage safety accident, impact, etc., to achieve the effect of improving production rate and avoiding casualties

Active Publication Date: 2019-12-27
重庆市化工研究院有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Prior art 1 uses fluorine gas as an oxidant to oxidize impurities in anhydrous hydrogen fluoride, and removes high boiling substances such as HAsF by washing and rectifying methods 6 , MAsF 6 、H 2 SO 4 、H 2 O, H 2 SiF 6 、H 3 PO 4 etc. and volatile component SO 2 、SiF 4 、PF 3 、POF 3 , AsF 5 , SF 6 、PF 5 etc., the problems still to be solved are, first, fluorine gas is highly toxic, highly chemically active and strong oxidizing, and it is difficult to solve the sealing problem of existing conveying machinery such as circulating pumps, and serious safety accidents are likely to occur if leakage occurs; , the integration of rectification and washing in a rectification tower does not meet the technical specifications; prior art 2 points out that the impurity arsenic in hydrogen fluoride has a serious impact on the performance of electronic devices, and the removal of arsenic is a key technology for the purification of hydrogen fluoride. The method commonly used in the prior art is to use an oxidant to oxidize trivalent arsenic to a high-boiling point pentavalent arsenic compound, and then use distillation to remove it. The oxidant is usually potassium permanganate, hydrogen peroxide, potassium dichromate, etc. The problems to be solved are: first, the introduction of other impurities increases the difficulty and cost of subsequent treatment; second, the oxidation time is longer, generally reaching 6 to 48 hours, and the energy consumption is higher

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  • An oxidation reaction device for preparing electronic grade hydrogen fluoride
  • An oxidation reaction device for preparing electronic grade hydrogen fluoride
  • An oxidation reaction device for preparing electronic grade hydrogen fluoride

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Embodiment Construction

[0014] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0015] Such as figure 1 , figure 2 , image 3 As shown, an oxidation reaction device for preparing electronic-grade hydrogen fluoride is characterized in that it includes an oxidation reaction kettle 1, a gas-liquid separator 2, a circulation storage tank 3, a sedimentation tank 4, a downcomer discharge pipe 5, a boiling discharge pipe 6, a reflux Exhaust pipe 7, collecting tank 8.

[0016] The gas-liquid separator 2 includes a separation tank 9 and a liquid baffle 10 . A sedimentation tank 4 is designed at the bottom of the circulating storage tank 3 for collecting precipitated complex particles. The liquid collection tank 8 is communicated with the oxidation reactor 1 through the boiling discharge pipe 6, and the oxidation reactor 1 is communicated with the circulation storage tank 3 through the downcomer discharge pipe 5, and the circul...

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Abstract

The invention relates to the technical field of fluorine chemical industry, in particular to an oxidation reaction device for preparing electronic-grade hydrogen fluoride. Its characteristics are: oxidation reaction kettle, gas-liquid separator, circulation storage tank, sedimentation tank, downcomer drain pipe, boiling drain pipe, return flow drain pipe, and liquid collection tank.

Description

technical field [0001] The invention relates to the technical field of fluorine chemical industry, in particular to an oxidation reaction device for preparing electronic-grade hydrogen fluoride. Background technique [0002] Electronic-grade hydrogen fluoride is mainly used as a cleaning agent and etchant in photovoltaics, integrated circuits and other industries. It is one of the key auxiliary materials in these industries. Since the impurity arsenic has a serious impact on the performance of electronic devices, the removal of arsenic is a must for the purification of hydrogen fluoride. The key technology is to use an oxidant to oxidize trivalent arsenic to a high-boiling pentavalent arsenic compound, and then use the difference in volatility to distill it out. Chinese invention patent (patent number CN201110276860.4, patent name is a method for preparing electronic grade hydrofluoric acid) discloses a method for preparing electronic grade hydrofluoric acid, including the f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B7/19
CPCC01B7/191C01B7/196
Inventor 杨松
Owner 重庆市化工研究院有限公司
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