Growth of Ga on Si Substrates by Halide Vapor Phase Epitaxy 2 o 3 thin film method

Abstract

The invention discloses a method for growing Ga2O3 thin film on Si substrate by using halide vapor phase epitaxy method, wherein a metal Ga source is arranged in a temperature region I of a reactor, the Si substrate is arranged in a temperature region II of the reactor, and the temperature of the temperature region I under a nitrogen atmosphere rises to 850 DEG C-950 DEG C, Temperature Zone II temperature rising to 300DEG C-1100 DEG C; When the temperature is stable, HCl and O2 are introduced simultaneously, and Ga2O3 thin film is grown. At that end of the growth, the temperature drops and thesample is taken out. A Ga2O3 thin film with high quality can be grown on a Si substrate by that method of the invention, and the temperature of the temperature region II can be control to obtain Ga2O3 with different crystalline forms. At present, most semiconductor devices are based on Si substrate, which makes it easy to integrate GaO on Si with existing devices.

Description

technical field [0001] The invention relates to a method for growing Ga on a Si substrate by halide vapor phase epitaxy 2 o 3 thin film method. Background technique [0002] Gallium oxide single crystal is a direct bandgap oxide semiconductor with a forbidden band width of 4.8-4.9eV, equivalent to more than 4 times that of silicon, even higher than silicon carbide (3.3eV) and gallium nitride (3.4eV). Known as the fourth generation of ultra-wide bandgap semiconductors. Gallium oxide single crystal has many crystal forms, among which β-Ga 2 o 3 most stable. Gallium oxide has unique ultraviolet transmission characteristics (absorption edge can reach 250nm); the breakdown electric field strength is as high as 8MV / cm, which is nearly 27 times that of the first-generation semiconductor silicon (Si), the third-generation semiconductor silicon carbide (SiC) and More than 2 times that of gallium nitride (GaN); the Baliga figure of merit (Baliga figure of merit index), which is ...

AI Technical Summary

Problems solved by technology

However, the growth of high-quality β-Ga by the single crystal melt method 2 o 3 , the temperature distribution of the thermal field, oxidation atmosphere, air pressure, etc. are very demanding, and the growth process must be effectively and precisely regulated

At the same time, due to the high temperature Ga 2 o 3 Easy to decompose and generate GaO, Ga 2 O, Ga and other products are highly volatile and corrode precious metal crucibles, and they are prone to polycrystalline growth, twine, mosaic structure, screw dislocation, cracking and other problems, so the growth of large-size, high-quality β-Ga 2 o 3 Single crystal is extremely difficult

In addition, the gallium oxide single crystal grown by the melt method requires crystal orientation, cutting and polishing processes before it can be used for device epitaxy, etc., and the cutting and polishing of gallium oxide is very easy to cause wafer fragmentation

Images