Homogeneous-thickness silicon-phase epitaxial-layer growth device and method
A vapor phase epitaxy and growth device technology, which is applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of inconsistent epitaxial layer thickness, etc., and achieve the effects of avoiding temperature differences, increasing area, and simple process
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Embodiment 1
[0039] Open a φ4" placement groove on the upper surface of the graphite base, the step width in the groove is 1mm, the depth of the groove is 1mm, the depth of the arc-shaped pit is 1mm, and the upper surface of the silicon substrate is 0.1mm lower than the upper surface of the base. Use the above The graphite base is subjected to the epitaxial process according to the conventional method, and four slip lines appear on the surface of the obtained epitaxial layer, and the total length is smaller than the diameter of the silicon wafer, which meets the control requirements of the slip line.
[0040] The epitaxial layer thickness parameters are as follows:
[0041] W 上 =21.17W 中 =20.56W 下 =20.26W 左 =21.93W 右 =20.99
[0042] The thickness uniformity λ=3.96%, but it has not yet reached the required thickness uniformity range, so the epitaxial layer needs to be vapor-phase polished.
[0043] According to the requirements of thickness consistency, the average removal thickness i...
Embodiment 2
[0051] Open a φ4 "placement groove on the upper surface of the graphite base, the step width in the groove is 3mm, the depth of the groove is 3mm, the depth of the arc-shaped pit is 5mm, and the upper surface of the silicon substrate is 1mm lower than the upper surface of the base. The obtained epitaxial layer There is only one slip line on the surface, and the length is less than the diameter of the silicon wafer, which meets the control requirements of the slip line.
[0052] The thickness parameters of the epitaxial layer are as follows:
[0053] W 上 =20.66W 中 =20.94W 下 =21.42W 左 =22.02W 右 =21.18
[0054] Its thickness uniformity λ=3.19%, is within the required range of thickness uniformity, so it is not necessary to implement vapor phase polishing.
[0055] Using the same silicon substrate only to implement the conventional epitaxial process, more than 16 slip lines appeared on the surface of the obtained epitaxial layer, and the total length was far greater than the...
Embodiment 3
[0061] Open the φ4 "placement groove on the upper surface of the graphite base, the step width in the groove is 2mm, the depth of the groove is 2mm, the depth of the arc-shaped pit is 3mm, and the upper surface of the silicon substrate is 0.4mm lower than the upper surface of the base. The obtained epitaxy There is only one slip line on the surface of the layer, and the length is less than the diameter of the silicon wafer, which meets the control requirements of the slip line.
[0062] The thickness parameters of the epitaxial layer are as follows:
[0063] W 上 =21.00W 中 =21.17W 下 =21.77W 左 =21.80W 右 =22.26
[0064] Its thickness uniformity λ=2.91%, is within the required thickness uniformity range, so it is not necessary to implement vapor phase polishing.
[0065] Using the same silicon substrate only to implement the conventional epitaxial process, more than 20 slip lines appeared on the surface of the obtained epitaxial layer, and the total length was far greater th...
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