Reactor and method for vapor phase epitaxy of nitride semiconductor material

Abstract

The invention discloses a reactor and a method for hydride vapor phase epitaxy (HVPE) of a nitride semiconductor material. The reactor comprises an axial symmetrical cylindrical reaction cavity, a concentric annular spray nozzle, a heater, a graphite boat, a substrate and the like, wherein the graphite boat and the substrate are heated by adopting resistance wire or infrared light irradiation; three to six gas outlet channels with rectangular cross sections are arranged in the tangential direction of the outer wall of the bottom end of the cavity; a concentric annular buffer strip is arranged among the outlet channels and the inner wall of the cavity, and a concentric annular flow collecting channel is arranged on the peripheries of the outlet channels; the outlet channels are communicated with the flow collecting channel. The reactor disclosed by the invention has the advantages that reactant gas forms micro-rotational flow in the effective growing zone of the substrate, so that the epitaxial growth thickness and the uniformity of components are obviously improved; as a graphite boat rotating device and auxiliary assemblies in a conventional reactor are omitted, the reactor is simplified, energy-saving and convenient to maintain, and the adverse impact of the rotating movement instability on the epitaxial growth is also eliminated.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a hydride vapor phase epitaxy (HVPE) growth system, such as a nitride semiconductor material growth system, in particular to the design and method of a reactor for Group III nitride vapor phase epitaxy. Background technique [0002] III-V nitride semiconductor materials are new materials that have attracted much attention in the semiconductor field at home and abroad in recent years, mainly represented by GaN, InGaN, AlGaN and other alloy materials. Group III nitride semiconductors have been found to play an increasingly important role in the development and fabrication of short-wavelength light-emitting diodes (LEDs), laser diodes (LDs), and electronic devices. [0003] There are many methods for growing GaN materials: such as metal organic vapor phase epitaxy (MOCVD), GaN single crystal growth under high temperature and high pressure, liquid phase growth method, molecular ...

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Problems solved by technology

However, at this stage, there is no ideal gas inlet structure that can obtain uniform precursor distribution in the radial direction, and uniform precursor distribution in the circumferential direction is mainly achieved by rotating the graphite boat placed in its groove.

In the reactor of the existing HVPE system, the rotation mechanism of the graphite boat is relatively complicated. For example, a rotating shaft needs to be used between the power source motor and the graphite boat to realize power transmission to make the graphite boat rotate; it is necessary to accurately control the rotation speed of the rotating shaft , to ensure the stability of the substrate rotation; and the connection mechanism between the rotating shaft and the bottom flange of the reactor chamber must not only ensure that the rotating shaft rotates without hindrance, but also ensure the vacuum condition in the reactor chamber

According to the existing reactor system, it is difficult to ensure the stability of the system under the above conditions and create an optimal concentration field of the precursor

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