Reactor and method for vapor phase epitaxy of nitride semiconductor material

A nitride semiconductor and vapor phase epitaxy technology, applied in the field of semiconductors, can solve problems such as complicated rotating mechanisms, and achieve the effects of simplifying devices, eliminating adverse effects and saving energy consumption

Active Publication Date: 2014-05-14
SINO NITRIDE SEMICON +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, at this stage, there is no ideal gas inlet structure that can obtain uniform precursor distribution in the radial direction, and uniform precursor distribution in the circumferential direction is mainly achieved by rotating the graphite boat placed in its groove.
In the reactor of the existing HVPE system, the rotation mechanism of the graphite boat is relatively complicated. For example, a rotating shaft needs to be used between the power source motor and the graphite boat to realize power transmission to make the graphite boat ro...

Method used

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  • Reactor and method for vapor phase epitaxy of nitride semiconductor material
  • Reactor and method for vapor phase epitaxy of nitride semiconductor material
  • Reactor and method for vapor phase epitaxy of nitride semiconductor material

Examples

Experimental program
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Effect test

Embodiment 1

[0018] Embodiment 1: as figure 1 As shown, in the suspended vertical HVPE system, the precursor gas and barrier gas are injected from the concentric ring nozzle 1 at the top of the reactor, and the length of the inner circular tube in the precursor channel is slightly shorter than the length of the outer circular tube; the periphery of the nozzle 1 is a shaft A symmetrical cylindrical reactor cavity 2; the outer wall of the cavity is wrapped with a resistance wire heater 3 and covers the entire cavity in the axial direction; a graphite boat disc 4 is placed directly under the nozzle 1, and the upper surface of the graphite boat disc 4 is set There are a plurality of pockets in which substrate wafers are loaded. The temperature of the graphite boat disc 4 and the substrate is maintained at 1070° C. by heating the resistance wire 5 alone or by infrared light irradiation. like figure 2 As shown, the reacted mixed gas in the reactor is discharged through the outlet channel 6 ar...

Embodiment 2

[0019] Embodiment 2: as Figure 3A , 3B As shown, the reactor is further improved on the basis of Example 1. In order to further expand the effective area of ​​the growable material, a concentric ring buffer zone 7 is set between the mixed gas outlet channel 6 and the inner wall of the cavity 2. The buffer The height of the belt 7 is consistent with the height of each gas outlet channel 6. This design expands the effective area of ​​the substrate where materials can grow, and at the same time weakens the adverse effect of the violent flow of fluid at each outlet on the uniform growth of nitride materials on the substrate.

Embodiment 3

[0020] Embodiment 3: as Figure 4 As shown, in combination with the advantages of Embodiments 1 and 2, the reactor has been further improved, and a concentric ring collecting channel 8 with an axisymmetric cavity is arranged on the periphery of the gas outlet channel 6 after the reaction of the reactor. The cross-section of the collecting channel 8 is rectangular or circular, and each reaction gas outlet channel 6 is connected with the collecting channel 8, and the collecting channel 8 is only designed with one outlet 9, so as to collect the gases discharged from each outlet channel for centralized treatment.

[0021] The reactor for vapor phase epitaxy of nitride semiconductor materials proposed by the present invention replaces the graphite boat rotating device, auxiliary components and driving motors in the existing HVPE growth system by adopting a structural design of tangential discharge for the gas outlet channel after reaction, not only It greatly simplifies the device,...

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Abstract

The invention discloses a reactor and a method for hydride vapor phase epitaxy (HVPE) of a nitride semiconductor material. The reactor comprises an axial symmetrical cylindrical reaction cavity, a concentric annular spray nozzle, a heater, a graphite boat, a substrate and the like, wherein the graphite boat and the substrate are heated by adopting resistance wire or infrared light irradiation; three to six gas outlet channels with rectangular cross sections are arranged in the tangential direction of the outer wall of the bottom end of the cavity; a concentric annular buffer strip is arranged among the outlet channels and the inner wall of the cavity, and a concentric annular flow collecting channel is arranged on the peripheries of the outlet channels; the outlet channels are communicated with the flow collecting channel. The reactor disclosed by the invention has the advantages that reactant gas forms micro-rotational flow in the effective growing zone of the substrate, so that the epitaxial growth thickness and the uniformity of components are obviously improved; as a graphite boat rotating device and auxiliary assemblies in a conventional reactor are omitted, the reactor is simplified, energy-saving and convenient to maintain, and the adverse impact of the rotating movement instability on the epitaxial growth is also eliminated.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a hydride vapor phase epitaxy (HVPE) growth system, such as a nitride semiconductor material growth system, in particular to the design and method of a reactor for Group III nitride vapor phase epitaxy. Background technique [0002] III-V nitride semiconductor materials are new materials that have attracted much attention in the semiconductor field at home and abroad in recent years, mainly represented by GaN, InGaN, AlGaN and other alloy materials. Group III nitride semiconductors have been found to play an increasingly important role in the development and fabrication of short-wavelength light-emitting diodes (LEDs), laser diodes (LDs), and electronic devices. [0003] There are many methods for growing GaN materials: such as metal organic vapor phase epitaxy (MOCVD), GaN single crystal growth under high temperature and high pressure, liquid phase growth method, molecular ...

Claims

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Application Information

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IPC IPC(8): C30B25/08C30B29/38
Inventor 魏武刘鹏熊欢张俊业赵红军童玉珍张国义
Owner SINO NITRIDE SEMICON
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