Slurry Compositions for Polishing a Metal Layer and Methods for Fabricating Semiconductor Devices Using the Same
A technology for polishing metals and compositions, which is applied in the fields of polishing compositions containing abrasives, semiconductor devices, semiconductor/solid-state device manufacturing, etc., and can solve problems such as reducing the polishing rate
Inactive Publication Date: 2018-12-18
SAMSUNG ELECTRONICS CO LTD +1
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- Summary
- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
Although slurries for polishing metal layers with reduced oxidant content can be used, such slurries may have the problem of significantly reducing the polishing rate
Method used
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Examples
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Effect test
example 1
[0047] 3.0% by weight of silicon dioxide with a particle diameter of 100 nm as polishing particles, 0.05% by weight of hydrogen peroxide as an oxidizing agent, 3.0% by weight of potassium phosphate as a first polishing conditioner, and ammonium persulfate as a second polishing conditioner 3% by weight and 3% by weight of iron sucrose as the third polishing modifier were mixed with each other to prepare a slurry composition for polishing the metal layer.
example 2
[0049] A slurry composition for polishing a metal layer was prepared in the same manner as in Example 1 except that the content of the first polishing modifier in Example 1 was changed to 1.5% by weight.
example 3
[0051] A slurry composition for polishing a metal layer was prepared in the same manner as in Example 1 except that the content of the first polishing modifier in Example 1 was changed to 5.0% by weight.
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Abstract
A slurry composition for polishing a metal layer and a method for fabricating a semiconductor device using the same are provided. The slurry composition for polishing a metal layer includes polishingparticles including a metal oxide, an oxidizer including hydrogen peroxide, and a first polishing regulator including at least one selected from a group consisting of phosphate, phosphite, hypophosphite, and metaphosphate, wherein a content of the oxidizer is 0.01 wt % to 0.09 wt % with respect to 100 wt % of the slurry composition for polishing the metal layer.
Description
[0001] This application claims priority to Korean Patent Application No. 10-2017-0073205 filed with the Korean Intellectual Property Office on June 12, 2017, the disclosure of which is incorporated herein by reference in its entirety. technical field [0002] The inventive concept relates to a slurry composition for polishing a metal layer and a method of fabricating a semiconductor device. In particular, the inventive concept relates to a slurry composition for polishing a metal layer including a polishing modifier and a method of fabricating a semiconductor device using the slurry composition. Background technique [0003] In the layer planarization process, for example, an etch-back process, a reflow process, a chemical mechanical polishing (CMP) process, etc. can be used. The chemical mechanical polishing process facilitates large area planarization. [0004] In the chemical mechanical polishing process, a polishing target to be polished is mounted on a polishing appara...
Claims
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IPC IPC(8): C09G1/02H01L21/304H01L21/302
CPCC09G1/02H01L21/302H01L21/304H01L21/3043H01L21/3212H01L21/28079H10B12/315H10B12/34H10B12/053C09K3/1409C09K3/1454H01L21/76877H01L21/7684H01L21/28123
Inventor 朴承浩孔铉九金正训李相美李愚仁全喜淑金相均崔浩朴钟爀尹一永
Owner SAMSUNG ELECTRONICS CO LTD