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Sensing circuit for bit line clamp transistors with different threshold voltages

A technology for clamping transistors and sensing circuits, used in circuits, electrical solid devices, electrical components, etc.

Active Publication Date: 2022-07-12
SANDISK TECH LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, various challenges exist in operating such memory devices

Method used

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  • Sensing circuit for bit line clamp transistors with different threshold voltages
  • Sensing circuit for bit line clamp transistors with different threshold voltages
  • Sensing circuit for bit line clamp transistors with different threshold voltages

Examples

Experimental program
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Embodiment Construction

[0043] A memory device is provided in which current is boosted in the channels of the memory strings based on data patterns or physical non-uniformities of the memory strings, such as non-uniform channel widths.

[0044] In some memory devices, such as NAND strings in blocks or sub-blocks, memory cells are connected to each other. Each NAND string includes several memory cells connected in series between one or more drain-side SG transistors (SGD transistors) and one or more source-side SG transistors (SGS transistors), the one or more drain-side The one or more source side SG transistors are on the drain side of the NAND string connected to the bit line and the one or more source side SG transistors are on the source side of the NAND string connected to the source line. Additionally, the memory cells may be arranged with a common control gate line (eg, a word line) serving as a control gate. A set of word lines extends from the source side of the block to the drain side of t...

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PUM

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Abstract

Techniques are provided to enhance current in the channels of memory strings during sensing operations based on data patterns or physical non-uniformity patterns such as non-uniform channel widths. In one aspect, the sensing circuit is modified for memory strings that typically store metadata in a highly programmed state. The bit line clamp transistors in these sense circuits can be configured with relatively low threshold voltages, resulting in relatively high clamp voltages, which in turn result in higher string currents during sensing. Lower threshold voltages may be achieved by at least one of shorter control gate lengths, smaller oxide thicknesses, lower oxide dielectric constants, or greater source and / or drain doping concentrations . In another aspect, memory strings that are expected to typically store high-state data are fabricated with relatively thicker channels and / or larger doping concentrations.

Description

technical field [0001] The present disclosure relates to the operation of memory devices. Background technique [0002] The use of semiconductor memory devices in various electronic devices has become more popular. For example, non-volatile semiconductor memory is used in cellular telephones, digital cameras, personal digital assistants, mobile computing devices, non-mobile computing devices, and other devices. [0003] Charge storage materials, such as floating gates or charge trapping materials, can be used in such memory devices to store charges representing data states. The charge trapping material can be arranged vertically in a three-dimensional (3D) stacked memory structure, or horizontally in a two-dimensional (2D) memory structure. One example of a 3D memory structure is a Cost Scalable (BiCS) architecture comprising a stack of alternating conductive and dielectric layers. [0004] A memory device includes memory cells that can be arranged in strings, eg, with se...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/12G11C7/18G11C8/08G11C8/14
CPCG11C7/12G11C7/18G11C8/08G11C8/14G11C11/5628G11C11/5642G11C16/10G11C16/26G11C16/3459G11C11/5621G11C16/0483H10B41/40H10B43/40G11C16/3427H10B43/35H10B69/00
Inventor 张正宜H.钱董颖达
Owner SANDISK TECH LLC