Flip-chip light-emitting chip and manufacture method thereof

Abstract

A flip-chip light-emitting chip and a manufacturing method thereof are disclosed, wherein the flip chip light-emitting chip comprises a substrate and an N-type semiconductor layer sequentially grown from the substrate, an active region, P-type semiconductor layer, a reflective layer, barrier layer, the adhesive lay, first insulating layer, an extended electrode layer, second insulating layer, an N-type electrode and a P-type electrode, the first insulating layer having at least one first channel and at least one second channel, a first expansion electrode portion and a second expansion electrode portion of the expansion electrode layer are respectively laminated on the first insulating layer, and extending to the N-type semiconductor layer via the first channel and to the barrier layer viathe second channel, wherein the second insulating layer has at least one third channel and at least one fourth channel, wherein the N-type electrode extends to the first expansion electrode portion via the third channel and the P-type electrode extends to the second expansion electrode portion via the fourth channel.

Description

technical field [0001] The invention relates to a semiconductor light-emitting diode, in particular to a flip-chip light-emitting chip and a manufacturing method thereof. Background technique [0002] In recent years, the flip chip of light-emitting diodes and related technologies have been developed by leaps and bounds. According to the different reflective materials of flip chips, flip chips can be divided into flip chips of ITO+DBR reflective structure and metal reflective Structure (such as Ag / Al) flip-chip, wherein metal reflective structures (especially Ag metal reflective structures) have higher reflectivity in the visible light range, therefore, metal reflective structures are widely used in flip-chips. Moreover, according to the logarithm of the insulating layer of the flip chip, the flip chip can be divided into a flip chip with a single ISO (insulation barrier) structure and a flip chip with a double ISO structure. For chip mounting, the current of flip chip with...

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Problems solved by technology

[0004] making attached figure 1 The shown flip chip manufacturing process is relatively complicated, including Mesa process, DE process, Mirror process, Barrier process, N-contact electrode process, first insulating layer process, extended electrode process, second insulating layer process, and electrode process. Nine photolithography processes, which not only lead to higher production costs and lower production efficiency of the flip chip, but also in the process of making the flip chip, the more photolithography processes, the easier it is to affect the quality of the flip chip. stability and reliability

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