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Thin film transistor, preparation method thereof and sensor

A thin film transistor and extension direction technology, applied in the field of detection, can solve the problems of only instantaneous detection, inaccurate measurement results, and inability to continuously monitor, so as to reduce the impact of the external environment, improve detection accuracy, and improve sample detection efficiency. Effect

Active Publication Date: 2018-12-21
BOE TECH GRP CO LTD
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Problems solved by technology

[0003] However, in the prior art, the sample to be tested is usually dropped onto the surface sensing area of ​​the TFT. Due to the influence of the external environment such as air and humidity during the detection process, the measurement result is not accurate enough, and this measurement method It can only be detected instantaneously and cannot be continuously monitored, resulting in low sample detection efficiency

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  • Thin film transistor, preparation method thereof and sensor
  • Thin film transistor, preparation method thereof and sensor
  • Thin film transistor, preparation method thereof and sensor

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Embodiment Construction

[0042] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0043] Conventional methods for fabricating microchannel structures involve complex and expensive processes, such as electron beam lithography and laser interference etching, and various subsequent etching, lift-off, and assembly processes. Conventional methods are associated with high manufacturing costs, low efficiency, and low scalability. In addition, there are still difficulties in fabricating high-resolution or ultra-high-resolution microchannels using conventional methods.

[0044] Accordingly, the present disclosure provides, inter alia, microchannel structures, sensors, microfluidic devices, lab-on-a-chip devices, thin-film transistors, and methods of fabricating microchannel structures and fabricating thin-film transisto...

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Abstract

The application provides a thin film transistor, a preparation method thereof and a sensor. Wherein, the thin film transistor comprises a substrate and a gate, a gate insulating layer, a source, a drain, and an active layer arranged on the substrate; wherein, a microchannel is arranged in the active layer, and the thin film transistor is used for detecting samples in the microchannel. According tothe technical solution of the thin film transistor, the preparation method thereof and the sensor, the microchannel is arranged in the active layer of the thin film transistor TFT, when the samples to be tested enter the microchannel, the distribution of electrons in the active layer is affected, and the fluctuations in TFT characteristics are caused, so that the technical effect of detecting thecomposition and properties of the liquid to be tested can be realized by detecting fluctuations in TFT characteristics. Further, with the help of the microchannel, the samples can be precisely controlled, on the one hand, the influence of the external environment is reduced, and the detection precision is improved; on the other hand, continuous monitoring of the samples can be achieved instead ofone-time detection, the efficiency of sample detection is improved.

Description

technical field [0001] The invention relates to the technical field of detection, in particular to a thin film transistor, a preparation method thereof, and a sensor. Background technique [0002] In recent years, sensors based on thin film transistor TFT devices have been gradually developed. When the samples to be tested, such as biological, chemical, and medical samples, come into contact with TFT, the characteristics of TFT will fluctuate. By detecting and analyzing the fluctuation of TFT characteristics, the detection of biological, chemical, medical and other sample reagents can be achieved, such as protein detection, DNA detection and so on. [0003] However, in the prior art, the sample to be tested is usually dropped onto the surface sensing area of ​​the TFT. Due to the influence of the external environment such as air and humidity during the detection process, the measurement results are not accurate enough, and such a measurement method It can only be detected ...

Claims

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Application Information

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IPC IPC(8): G01N27/414H01L29/786
CPCG01N27/414H01L29/786H01L29/1033H01L29/41733H01L29/42384H01L29/66742G01N27/4141
Inventor 马啸尘袁广才宁策胡合合谷新
Owner BOE TECH GRP CO LTD
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