SPR neurosynaptic device based on a-si memristive effect and its preparation method
A technology of neural synapse and memristor, which is applied in the field of bionic devices, can solve the problems of signal transmission crosstalk and small signal processing bandwidth, and achieve the effects of large signal processing bandwidth, strong anti-electromagnetic interference ability, and large bandwidth
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Embodiment 1
[0036] A SPR neurosynaptic device based on a-Si memristive effect, its structure is as figure 1 Shown: It includes a memristor and a crystalline silicon prism 6 arranged above the memristor. In this embodiment, the crystalline silicon prism 6 is a triangular prism processed from crystalline silicon, and the memristor has "Bottom electrode 1 / first a-Si resistive layer 2 / second a-Si resistive layer 3 / top electrode 4" vertical four-layer structure, in this embodiment, the top electrode 4 is deposited on the bottom surface of the crystalline silicon prism 6 Metallic silver Ag, the second a-Si resistive layer 3 is an a-Si film containing Ag nanoparticles, the volume fraction of Ag nanoparticles is 40%, and the first a-Si resistive layer 2 is an a-Si film containing Ag nanoparticles The a-Si film, the volume fraction of Ag nanoparticles is 5%, the top electrode 4 is metallic platinum Pt deposited on the bottom surface of the first a-Si resistive layer 2; the refractive index of ...
Embodiment 2
[0046] A SPR neurosynaptic device based on a-Si memristive effect, its structure is as figure 2 Shown: It includes a crystalline silicon wafer 5 and its supporting memristor and a crystalline silicon prism 6 arranged above the crystalline silicon wafer 5. In this embodiment, the crystalline silicon prism 6 is a triangular prism processed from crystalline silicon. The silicon wafer 5 is also made of crystalline silicon. The crystalline silicon wafer 5 and the crystalline silicon prisms 6 are preferably bonded with a refractive index matching liquid; the memristor has "bottom electrode 1 / first a" from bottom to top. -Si resistive layer 2 / second a-Si resistive layer 3 / top electrode 4" vertical four-layer structure. In this embodiment, the top electrode 4 is metallic silver Ag deposited on the bottom surface of the crystalline silicon wafer 5. The second a- The Si resistive layer 3 is an a-Si film containing Ag nanoparticles, and the volume fraction of Ag nanoparticles is 40%. The ...
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