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A Method of Enhancing the Reliability of Flash Memory

A technology of FLASH memory and reliability, which is applied in the field of enhancing the reliability of FLASH memory, and can solve the problems of reliability failure and ECC algorithm unable to correct errors, etc.

Active Publication Date: 2021-11-09
BEIJING CEC HUADA ELECTRONIC DESIGN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If there is a 2-bit failure in the data, the ECC algorithm cannot correct the error and the reliability will fail

Method used

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  • A Method of Enhancing the Reliability of Flash Memory
  • A Method of Enhancing the Reliability of Flash Memory

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Embodiment Construction

[0021] The method of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0022] Such as figure 1 As shown, the method of the present invention mainly implements functions by establishing a FLASH mapping table between user applications and hardware reading and writing FLASH memory, which mainly includes mapping information initialization, bad page processing, etc.;

[0023] When the program is powered on, initialize the FLASH mapping table to the default value, indicating that the user logical address of the FLASH memory is the actual physical address of the FLASH memory in the default state; initialize the global variables and image processing to the default value, indicating the default mapping area and unavailable power off;

[0024] Read / write FLASH Connect the FLASH mapping table through the read-write interface to obtain the mapping relationship between the current FLASH memory user logical address and the actual FLAS...

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Abstract

The present invention introduces a method for enhancing the reliability of the FLASH memory, which involves dealing with the access request of the upper layer application to the FLASH memory page, by establishing a FLASH mapping table, searching the mapping table for the actual address corresponding to the accessed page, and accessing the actual address; after accessing , check the ECC check register provided by the hardware. If the value of this register is 0, it means that the access is successful; if the value of this register is 1, it means that there is an ECC1bit error and it has been corrected. page operation. When changing pages, find the page address of the available redundant area in the mapping table according to the rules. If the redundant area is exhausted, the reliability of the FLASH memory will fail. Otherwise, use the redundant area and update the FLASH mapping table information to complete the page change operation. . The method introduced in the present invention can dynamically improve the reliability of the FLASH memory by establishing a FLASH mapping table, configuring the size of the redundant area of ​​the FLASH memory, solving the requirements of different users on the reliability of the FLASH memory, and improving the development efficiency.

Description

technical field [0001] The invention relates to the field of chip FLASH memory, in particular to a method for enhancing the reliability of the FLASH memory. Background technique [0002] Thanks to its large capacity, high speed, low power consumption, non-volatile and other advantages, flash memory (FLASH) memory is occupying more and more important positions in people's daily life; but due to Before updating data, the FLASH memory must first erase the block / page where it is located, and the number of erasing and writing of each block / page has an upper limit; during the use of the FLASH memory, with the use time and the number of uses Increase, there will be bad blocks / pages or hidden dangers of bad blocks / pages in the FLASH memory, especially for some blocks / pages are more frequently erased than other blocks / pages (hot pages), which will lead to, The FLASH block / page data storage is abnormal, which affects the reliability of the FLASH memory and shortens the service life o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F11/10G06F12/02
CPCG06F11/1004G06F12/0246
Inventor 刘宏梅陈峰仲倩黎
Owner BEIJING CEC HUADA ELECTRONIC DESIGN CO LTD