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A method for manufacturing a three-dimensional stereoscopic chip and a wire tracing structure thereof

A three-dimensional, production process technology, applied in the manufacture of electric solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc. small area effect

Pending Publication Date: 2019-01-11
SHENZHEN MICROGATE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In summary, the purpose of the present invention is to solve the problem that the existing surface acoustic wave device chips are pro

Method used

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  • A method for manufacturing a three-dimensional stereoscopic chip and a wire tracing structure thereof
  • A method for manufacturing a three-dimensional stereoscopic chip and a wire tracing structure thereof

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Embodiment Construction

[0013] The structure of the present invention will be further described below with reference to the drawings and preferred specific embodiments of the present invention.

[0014] Reference figure 1 with figure 2 As shown in the production process method of the three-dimensional chip of the present invention, the first metal layer 2 is first made on the substrate 1; 4. Perform a gradient treatment on the edge of the isolation adhesive layer 4; then, a second metal layer 3 that straddles the first metal layer 2 on the isolation adhesive layer 4 is fabricated on the substrate 1. The function of the isolation adhesive layer 4 is to realize the intersection of the first metal layer 2 in the horizontal direction and the second metal layer 3 in the vertical direction without short circuit. Compared with the traditional production of the substrate and then the second metal layer 3, the present invention greatly reduces The volume of the chip.

[0015] Since the isolation adhesive layer ...

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Abstract

A method for manufacturing a three-dimensional stereoscopic chip and a wire tracing structure thereof relate to that technical field of surface acoustic wave device chips. Firstly, the first metal layer is fabricated on the substrate to solve the problem that the SAW device chip is manufactured by planar process and the product volume is large, which is not conducive to miniaturization. And then adding an isolating adhesive layer on the position above the first metal layer which needs to intersect with the second metal layer, and carrying out gradient treatment on the edge of the isolating adhesive layer. Then, a second metal layer across the first metal layer is fabricated on the substrate via the insulating adhesive layer. The connection of horizontal and vertical signals without short circuit is realized, which greatly reduces the area of the chip, is an indispensable technology for the chip at present and in the future. The gradient treatment can effectively prevent the cavity fromcollapsing, the second metal layer is easy to fracture, and the chip performance is open, which is the technical problem of device function failure, and the reliability is good.

Description

Technical field [0001] The invention relates to the technical field of surface acoustic wave device chips. Background technique [0002] Surface Acoustic Wave Filters (SAWF) are widely used in radio frequency mobile communications. According to research institute Yole Développement, the production value of radio frequency SAW devices used in smartphones in 2016 was 10.1 billion US dollars. By 2022, it is expected to grow to US$22.7 billion. Such rapid growth is inseparable from the use of new antennas and multi-carrier aggregation technologies for 5G. These new technologies will require additional filtering functions and drive the booming development of the relevant component market. [0003] Miniaturization, thinness, and integration are the eternal pursuit of mobile communication terminals. In order to meet the needs of the terminal, smaller requirements are put forward for its internal modules and devices. The surface acoustic wave device chip adopts semiconductor IC technolo...

Claims

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Application Information

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IPC IPC(8): H01L21/48H01L23/538H01L41/047H01L41/29
CPCH01L23/5381H01L21/4846H10N30/875H10N30/06
Inventor 姚艳龙赖定权沙小强陈香玉
Owner SHENZHEN MICROGATE TECH