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A kind of method for single-node seedling growth of sweet potato

A single-node, sweet potato technology, applied in the field of plant cultivation, can solve the problems of reducing the rate of sweet potato seedling growth and affecting production

Active Publication Date: 2021-04-27
漳浦县六鳌全域有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, the traditional method of sweet potato seedling cultivation is mainly divided into two kinds of potato block seedlings and vine seedlings. Potato block seedlings can be divided into plastic film-covered seedbed seedlings, plastic film-covered seedlings, and plastic greenhouse open-field seedlings; These two methods of seedling formation are easily affected by factors such as temperature, rainfall, and light. Once extreme weather occurs, the rate of sweet potato seedling growth will be greatly reduced and production will be affected.

Method used

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  • A kind of method for single-node seedling growth of sweet potato

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Experimental program
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Effect test

Embodiment 1

[0017] (1) Material selection: choose high-quality strong seedlings as single-node materials, the purity of the variety is not less than 99.9%, the diameter of potato seedlings is 0.4cm, no pests and diseases, and no yellow leaves;

[0018] (2) Single-segment pruning: select a single-segment with full nodes, no damage to the axillary buds, and vigorous growth, and the length of the upper and lower ends of the single-segment should not exceed 2cm;

[0019] (3) Disinfection of single joints: After washing the cut single joints with clean water, soak the single joints for 30 minutes in an aqueous solution containing 0.2 g / L difenoconazole, 0.05 g / L Zhongshengmycin, and plant hormones ;

[0020] (4) Artificial root acceleration: put a single section of soaked sweet potato into an artificial incubator for germination and root acceleration, culture temperature 30±1°C, humidity 80±5%, light intensity 11000 lx, light time 13h, It can be planted in the culture medium after 2 days;

...

Embodiment 2

[0025] (1) Material selection: choose high-quality strong seedlings as single-node materials, the purity of the variety is not less than 99.9%, the diameter of potato seedlings is 0.3cm, no pests and diseases, and no yellow leaves;

[0026] (2) Single-segment pruning: select a single-segment with full nodes, no damage to the axillary buds, and vigorous growth, and the length of the upper and lower ends of the single-segment should not exceed 2cm;

[0027] (3) Disinfection of single joints: After washing the cut single joints with clean water, soak the single joints for 30 minutes in an aqueous solution containing 0.1 g / L difenoconazole, 0.01 g / L Zhongshengmycin, and plant hormones ;

[0028] (4) Artificial root acceleration: Put a single section of soaked sweet potato into an artificial incubator to accelerate germination and root acceleration. It can be planted in the culture medium after 2 days;

[0029] (5) Single-node planting: Plant a single node of sweet potato in a cl...

Embodiment 3

[0033] (1) Material selection: choose high-quality strong seedlings as single-node materials, the purity of the variety is not less than 99.9%, the diameter of potato seedlings is 0.6cm, no pests and diseases, and no yellow leaves;

[0034] (2) Single-segment pruning: select a single-segment with full nodes, no damage to the axillary buds, and vigorous growth, and the length of the upper and lower ends of the single-segment should not exceed 2cm;

[0035] (3) Disinfection of single joints: After washing the cut single joints with clean water, soak the single joints for 30 minutes in an aqueous solution containing 0.3 g / L difenoconazole, 0.1 g / L Zhongshengmycin, and plant hormones ;

[0036] (4) Artificial root acceleration: Put a single section of soaked sweet potato into an artificial incubator to accelerate germination and root acceleration. It can be planted in the culture medium after one day;

[0037] (5) Single-node planting: Plant a single node of sweet potato in a cl...

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Abstract

The invention provides a method for growing seedlings of a single sweet potato node, through the selection of a single sweet potato node: select a node that is full, has no damage to the axillary buds, and cuts a single node with strong growth, and the length of the upper and lower ends of the single node does not exceed 2cm; the single node is sterilized : Use 0.1~0.3 g / L difenoconazole, 0.01~0.1 g / L Zhongshengmycin mixed plant hormones to soak the single section for 30 minutes; artificial root promotion: put the soaked single section of sweet potato into artificial cultivation Germination and root acceleration in the box, culture temperature 30±1℃, humidity 80±5%, light intensity 10000~12000lx, light time 12~14h, germination and root acceleration can be planted in the culture medium after one day. Accelerate the breeding speed of sweet potato seedlings, increase the breeding coefficient, and meet the needs of sweet potato production.

Description

technical field [0001] The invention relates to a crop cultivation method, in particular to a single-node seedling-growing technology of sweet potato, belonging to the technical field of plant cultivation. Background technique [0002] At present, the traditional method of sweet potato seedling cultivation is mainly divided into two kinds of potato block seedlings and vine seedlings. Potato block seedlings can be divided into plastic film-covered seedbed seedlings, plastic film-covered seedlings, and plastic greenhouse open-field seedlings; These two seedling methods are easily affected by factors such as temperature, rainfall, and light. Once extreme weather occurs, the rate of sweet potato seedling growth will be greatly reduced and production will be affected. In order to solve these problems, we proposed a method of single-node seedling growth of sweet potato, in order to speed up the breeding speed of sweet potato seedlings, increase the breeding coefficient, and meet t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): A01G31/00A01G24/15A01G24/20A01G24/00
CPCA01G31/00
Inventor 李国良邱永祥汤浩林赵淼张鸿刘中华许泳清李华伟许国春纪荣昌罗文彬邱思鑫
Owner 漳浦县六鳌全域有限公司
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