Preparation method of tellurium nanowire material, tellurium nanowire material and device

A technology of tellurium nanowires and tellurium powder, which is applied in the direction of elements such as selenium/tellurium, can solve problems such as complex processes, and achieve the effect of simple preparation process

Active Publication Date: 2021-10-19
NORTHWEST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, the Chinese invention patent (CN201210428109.6) discloses a macro-preparation method for ultra-fine tellurium nanowires. The prepared material belongs to wet reaction, and the prepared tellurium material is uniform and can be prepared in batches, but the process is relatively complicated.

Method used

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  • Preparation method of tellurium nanowire material, tellurium nanowire material and device
  • Preparation method of tellurium nanowire material, tellurium nanowire material and device
  • Preparation method of tellurium nanowire material, tellurium nanowire material and device

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Embodiment 1

[0031] This embodiment provides a method for preparing tellurium nanowires on a silicon dioxide / silicon substrate, comprising the following steps:

[0032] Step 1: Process the single end of the quartz tube with a diameter of 1.2cm into a quartz nozzle with a diameter of about 1mm, the structure is as follows figure 1 shown;

[0033] Step 2: Cut the silica / silicon substrate into a 2cm*4cm sheet and blow it off with an air gun, and place it on the corundum crucible face down; place the corundum crucible in the quartz tube so that the nozzle is facing the silica side, structured as figure 1 shown.

[0034] Step 3: first pass 100 sccm of argon gas into the quartz tube for 30 minutes to completely remove the residual oxygen in the tube. Switch the gas path, then feed 50 sccm of argon and 20 sccm of hydrogen into the quartz tube of the quartz nozzle, and heat the tube-type atmosphere furnace to 750°C with a heating rate of 37.5°C / min and hold for 4 minutes. Then turn off the hea...

Embodiment 2

[0037] This embodiment provides a method for preparing tellurium nanowires on a silicon dioxide / silicon substrate, comprising the following steps:

[0038] Step 1: Process the single end of the quartz tube with a diameter of 1.2cm into a quartz nozzle with a diameter of about 1mm, the structure is as follows figure 1 shown;

[0039] Step 2: Cut the silica / silicon substrate into a 2cm*4cm sheet and blow it off with an air gun, and place it on the corundum crucible face down; place the corundum crucible in the quartz tube so that the nozzle is facing the silica side, structured as figure 1 shown.

[0040] Step 3: first pass 100 sccm of argon gas into the quartz tube for 30 minutes to completely remove the residual oxygen in the tube. Switch the gas path, then feed 60 sccm of argon and 10 sccm of hydrogen into the quartz tube of the quartz nozzle, and heat the tube-type atmosphere furnace to 700°C with a heating rate of 35°C / min and keep it warm for 30min. Then turn off the h...

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Abstract

The invention discloses a preparation method of a tellurium nanowire material, a tellurium nanowire material and a device. Using tellurium powder as a raw material, the tellurium nanowire is formed on the silicon dioxide surface of a silicon dioxide / silicon substrate by physical vapor deposition. Deposition and growth; the gas phase of the physical vapor deposition is a mixed gas of argon and hydrogen, and the total flow of argon and hydrogen is 70 sccm; the temperature of the physical vapor deposition is 600-800°C. That is, tellurium nanowires are directly prepared on a silicon dioxide / silicon substrate by physical vapor deposition. In this experiment, the preparation method is simple in process, does not involve chemical reactions, has the characteristics of environmental friendliness and low cost, and the prepared tellurium nanowires are of high quality, and the aspect ratio of the nanowires can be controlled and adjusted. Tellurium nanowires can be used as gas sensors, catalysts, thermoelectric materials, photovoltaic materials, solar cells and field effect transistor materials.

Description

technical field [0001] The invention belongs to the field of nanometer materials, and relates to a preparation method of a tellurium nanowire material, a tellurium nanowire material and a device. Background technique [0002] Tellurium (Te) is a p-type semiconductor with a bulk bandgap of ~0.35eV and a monolayer bandgap of ~1eV. Has an anisotropic crystal structure consisting of helical chains. Tellurium materials have many interesting physical properties, including photoconductivity, piezoelectricity, pyroelectricity, nonlinear optical response, and can be used in radiative cooling devices, gas sensors, field effect devices, and infrared acousto-optic deflectors, etc. One-dimensional semiconductor nanostructures have attracted much attention due to their excellent physical properties and potential applications in future nanodevices. To capture the potential offered by 1D nanostructures, one of the most important questions is how to synthesize 1D nanostructures in large qu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/02
CPCC01B19/02
Inventor 刘政许曼章张志勇赵武闫军锋翟春雪郭昱希李强王学文郑璐
Owner NORTHWEST UNIV
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