34results about How to "Control aspect ratio" patented technology

The invention discloses an alloy nano-tube and a preparation method thereof, which belong to the field of nanometer material. The alloy nano-tube is a solid solution, a metal compound or an amorphous state formed by two transition metal elements, namely A and B, wherein the A accounts for 15.3 to 86.4 percent of the total amount, and the B accounts for 13.6 to 84.7 percent of the total amount. The preparation method comprises the following steps: a formwork with a layer of gold or platinum film introduced into the back side is soaked in an electrolysis bath containing metal ion A and B, and is electrodeposited under certain voltage and current conditions to obtain a binary alloy nano-tube. Binary alloy nano-tubes with different diameters, different lengths and different components can be obtained by adopting formworks with nanochannels with different inner diameters, controlling the electrodeposition time and adjusting cathode current density. The binary alloy nano-tube has simple preparation process, mild reaction conditions, strong controllability and good application prospect.

A method of creating and controlling the particle spacing of a regular lattice of monodisperse particles or a mixture of monodisperse particles by using an electric field.

The invention discloses a design method of a cylindrical radial uniform magnetic field coil, which comprises the following steps of: firstly, equally dividing the surface of the coil along the axial direction according to the azimuth angle of a cylindrical coordinate system, determining the surface current density expression on one side, and determining that the current density distribution on theother side is completely the same as that on the other side but opposite in current direction; secondly, deducing a magnetic field expression of a target field point, selecting the curvature of the current density as a penalty function of a constraint coil, setting a constraint factor of the penalty function, and solving a value of an undetermined coefficient in the current density expression byutilizing a regularization method to obtain a current density distribution condition of the cylindrical surface; and finally, obtaining an actual current routing shape of the cylindrical radial uniform magnetic field coil by using a flow function. The method serves as an inverse method of coil design, the size of the cylindrical coil is limited in advance, the coordinate position of a target fieldpoint is selected, then actual current distribution of the coil is obtained through calculation, the length-diameter ratio of the cylindrical coil is effectively controlled, and a gap can be reservedin the center of the coil to form a light through hole.

The present invention proposes a device and method for detecting mechanical parameters of hydrate-containing sediments based on X-CT. The device includes a reactor, the body of the reactor is a beryllium or carbon fiber pressure-resistant tube, the end covers at both ends are sealed, and the outer side of the lower end cover is connected to the The axial pressure loading reaction mechanism is connected, and the interior of the reactor is from top to bottom: the upper sample adjustment pad, the sediment sample, the lower sample adjustment pad and the axial pressure loading piston, and also includes a shear loading unit, a back pressure control unit, Unload the pressure loading unit and the strain measurement unit. The invention satisfies the high-pressure conditions required for the synthesis of methane hydrate, and can accurately control the axial temperature of the sample to make it evenly distributed; it can also quickly control the temperature to improve the efficiency of sample preparation, and can adjust the size of the sample to achieve control of different The purpose of the aspect ratio of the sample is that the invention can realize the simultaneous detection of the stress-strain curve of the gas hydrate-containing sediment and the internal damage microstructure of the sediment, and can realize the constant-strain shear and constant-stress creep test.

The invention provides solar cell front conductive silver paste and a preparation method thereof, and the conductive silver paste is prepared from the following materials in parts by weight: 40-50 parts of bisphenol A epoxy resin; 20 to 40 parts of nano silver particles; 30 to 50 parts of nano glass powder; 50-60 parts of an organic carrier mixed solution; 8 to 10 parts of tetraethyl titanate; 6-9 parts of alkaline amine; 5 to 10 parts of anhydride; 8 to 15 parts of a boron trifluoride monoethylamine complex; the organic carrier mixed solution comprises organic acid doped conductive organic polymer / epoxidized soybean oil with the mass fraction concentration of 15%-20% and a high-boiling-point solvent with the mass fraction concentration of 80%-85%. According to the invention, the contact between the inorganic powder and the screen cloth material can be effectively wetted, the more excellent fine line ink penetration capability is provided, the method is suitable for the high-speed printing of the ultra-fine grid of the current large-area silicon wafer, the fine grid line width control capability is excellent, and the better electrode height-width ratio can be formed.

The invention relates to a fin field effect transistor preparation method. The preparation method comprises the following steps: a base is provided, wherein the base comprises a semiconductor substrate and an insulating layer located on the semiconductor substrate, the base has a stepped shape and has a high region and a low region; a hard mask layer is formed on the insulating layer and planarization is performed; the hard mask layer and the insulating layer are etched, and at least one groove is formed in the high region and the low region of the base separately so as to expose the semiconductor substrate; the groove is filled with a semiconductor material and planarization is performed to form a fin pattern; and the hard mask layer is removed through etching to form fins having different heights. According to the invention, the heights of the fins, the height difference of the fins having different heights and the fin depth-width ratio can be controller easier, the problem that the fin height is not easy to control in the prior art can be solved skillfully, and the yield of semiconductor devices can be improved.

The invention provides a rosin refining kettle, which comprises a cylindrical pot body, an upper sealing head and a lower sealing head and is characterized by further comprising a mosquito-repellent incense coiler, and preferably comprising a snake-shaped coiler and an outer semicircular coiler. The invention also provides a refining method by using the rosin refining kettle. By the high-efficiency rosin refining kettle, a height-diameter ratio can be controlled effectively and a heating position can be flexibly adjusted according to change of a liquid level during rosin refining, and the load on a vacuum pump set is low. By the refining method, the grade of an obtained rosin product is much higher than the standard of a special grade in China.

The invention provides a method used for preparing flake-like silicon dioxide powder, and belongs to the technical field of powder particle size and morphology control. According to the method, bauxitic clay ore powder containing SiO2 is taken as a raw material; an activator, a dispersant, and a crystal grain morphology control agent are added into the raw material for uniform mixing; an obtained mixed powder is subjected to calcining in atmosphere containing halogen, and obtained silicon halide is subjected to hydrolysis so as to obtain silicon dioxide and halogen hydride; after calcining, the valve of a sealed reaction container is unsealed, so that high pressure gas in the sealed reaction container is delivered into a gas-solid separator with a larger volumn via expansion so as to realize gas-solid separation of silicon halide with gas phase and obtain the flake-like silicon dioxide powder, wherein the gas-solid separator is provided with a water cooling jacket. Thickness of the flake-like silicon dioxide powder is less than 0.2 <mu>m, and average diameter-to-thickness ratio is higher than 50. Reaction temperature of the method is relatively low; the method is simple; energy consumption is low; production cost is low; and the diameter-to-thickness ratio of the flake-like silicon dioxide powder can be adjusted.

The invention provides an array substrate and a preparation method thereof and a display panel, the array substrate comprises an electrode layer, a gate insulation layer and an active layer, the electrode layer comprises a first metal layer, a second metal layer and a third metal layer which are stacked, a first end of the active layer is electrically connected with the first metal layer, and a second end of the active layer is electrically connected with the third metal layer. The second end of the active layer is electrically connected with the third metal layer, the second metal layer comprises at least two stacked metal sub-layers in the direction from the first metal layer to the third metal layer, and every two adjacent metal sub-layers are arranged in an insulated mode; according to the invention, the first metal layer, the second metal layer and the third metal layer which form the electrode layer are stacked, the channel of the active layer is arranged on the side wall of the electrode layer, the second metal layer is divided into a plurality of metal sub-layers which are stacked, and the thickness and the number of the metal sub-layers can be regulated and controlled, so that the thickness and the number of the metal sub-layers can be regulated and controlled. Therefore, the width-to-length ratio of the channel of the active layer can be regulated and controlled, and the purpose of flexibly regulating the characteristics of the thin film transistor is achieved.

The invention discloses a preparation method of a tellurium nanowire material, a tellurium nanowire material and a device. Using tellurium powder as a raw material, the tellurium nanowire is formed on the silicon dioxide surface of a silicon dioxide / silicon substrate by physical vapor deposition. Deposition and growth; the gas phase of the physical vapor deposition is a mixed gas of argon and hydrogen, and the total flow of argon and hydrogen is 70 sccm; the temperature of the physical vapor deposition is 600-800°C. That is, tellurium nanowires are directly prepared on a silicon dioxide / silicon substrate by physical vapor deposition. In this experiment, the preparation method is simple in process, does not involve chemical reactions, has the characteristics of environmental friendliness and low cost, and the prepared tellurium nanowires are of high quality, and the aspect ratio of the nanowires can be controlled and adjusted. Tellurium nanowires can be used as gas sensors, catalysts, thermoelectric materials, photovoltaic materials, solar cells and field effect transistor materials.

The invention discloses an alloy nano-tube and a preparation method thereof, which belong to the field of nanometer material. The alloy nano-tube is a solid solution, a metal compound or an amorphous state formed by two transition metal elements, namely A and B, wherein the A accounts for 15.3 to 86.4 percent of the total amount, and the B accounts for 13.6 to 84.7 percent of the total amount. The preparation method comprises the following steps: a formwork with a layer of gold or platinum film introduced into the back side is soaked in an electrolysis bath containing metal ion A and B, and is electrodeposited under certain voltage and current conditions to obtain a binary alloy nano-tube. Binary alloy nano-tubes with different diameters, different lengths and different components can be obtained by adopting formworks with nanochannels with different inner diameters, controlling the electrodeposition time and adjusting cathode current density. The binary alloy nano-tube has simple preparation process, mild reaction conditions, strong controllability and good application prospect.

The invention discloses a method for manufacturing a photon sieve with a high height-width ratio. The method comprises the following steps of: manufacturing a photon sieve mask plate and an optical alignment mask plate; performing X-ray copying by utilizing the photon sieve mask plate to obtain a first copied mask plate; performing the X-ray copying again by utilizing the first copied mask plate to obtain a second copied mask plate; and optically aligning a photon sieve pattern of the second copied mask plate by utilizing the optical alignment mask plate as a mask to obtain the photon sieve with the high height-width ratio. Compared with the conventional manufacturing method for the photon sieve, the method has the advantage that: the photon sieve with a higher height-width ratio and a shorter operating wavelength can be manufactured.

The invention relates to a preparation method of a silicon quantum dot film having anisotropy, and discloses a technical method for regulating elemental composition variation to form different strain energy induced anisotropic polymorphous silicon quantum dots, further regulating the absorption spectrum range and obviously improving the photoelectric conversion efficiency of a used material. The preparation method comprises the following main steps: performing pretreatment prior to coating, performing magnetron co-sputtering on a silicon-germanium alloy target and a carbon target having different composition ratios with Ar ions, regulating the sputtering power of the silicon-germanium target and the carbon target, and depositing a composition-controllable amorphous silicon carbide-germanium film on a silicon and glass base; and then, performing multi-stage annealing treatment in a nitrogen gas atmosphere, thus forming the silicon quantum dot film having anisotropy, which is inlaid in amorphous SiC. The film has multi-exciton effect, and simultaneously has multi-wavelength light absorption characteristics in a wavelength range of 1800nm (infrared) to 300nm (ultraviolet), thus hopefully improving the light absorption and photoelectric conversion efficiency of a silicon-based photovoltaic device greatly.

The invention provides a dispersing method capable of accurately regulating and controlling slenderness ratios of alumina whiskers. The dispersing method comprises the following step: dispersing the alumina whiskers in a dispersing agent by adopting a cooperative dispersing method implemented by ultrasonic waves, blade agitation and big ball low-speed ball milling, wherein the dispersing agent comprises a first dispersing agent and a second dispersing agent; the first dispersing agent is polyethylene glycol; the second dispersing agent is 2-amino-2-methyl-1-propanol or polyacrylic acid; the mass ratio of the first dispersing agent to the second dispersing agent is (1 to 3) to (0.1 to 3). Compared with the prior art, the dispersing method has the advantages that a steric-hindrance effect and an electric double layer theory are brought into full consideration, a non-ionic dispersing agent and an anionic dispersing agent prepared from specific components are used in a combination way, and the cooperative dispersing method implemented by the ultrasonic waves, the blade agitation and the big ball low-speed ball milling is adopted on the basis of reasonably controlling the proportion of the two dispersing agents, so that a good dispersing effect of the alumina whiskers of different slenderness ratios is achieved.

Preparation and application of a magnetic polymer hydrogel loaded with one-dimensional iron ferric oxide nanocrystals, preparing anionic hydrogel or anionic hydrogel precursor solution, and preparing FeSO4 and Fe2(SO4)3 mixed water to form iron Ionic solution; then mix the two, soak at room temperature, so that the anionic hydrogel completely absorbs iron ions; soak the hydrogel that has absorbed iron ions in NaOH solution, and heat it in a water bath to obtain a magnetic material loaded with one-dimensional Fe3O4 nanocrystals. The polymer hydrogel can be used to treat sewage containing organic dyes. The present invention does not use any toxic or organic reagents, and obtains a loaded one-dimensional structure (rod-shaped ) Magnetic polymer hydrogel of Fe3O4 nanocrystals, and overcomes the problem of uneven distribution of magnetic particles.