Array substrate, preparation method thereof and display panel

Abstract

The invention provides an array substrate and a preparation method thereof and a display panel, the array substrate comprises an electrode layer, a gate insulation layer and an active layer, the electrode layer comprises a first metal layer, a second metal layer and a third metal layer which are stacked, a first end of the active layer is electrically connected with the first metal layer, and a second end of the active layer is electrically connected with the third metal layer. The second end of the active layer is electrically connected with the third metal layer, the second metal layer comprises at least two stacked metal sub-layers in the direction from the first metal layer to the third metal layer, and every two adjacent metal sub-layers are arranged in an insulated mode; according to the invention, the first metal layer, the second metal layer and the third metal layer which form the electrode layer are stacked, the channel of the active layer is arranged on the side wall of the electrode layer, the second metal layer is divided into a plurality of metal sub-layers which are stacked, and the thickness and the number of the metal sub-layers can be regulated and controlled, so that the thickness and the number of the metal sub-layers can be regulated and controlled. Therefore, the width-to-length ratio of the channel of the active layer can be regulated and controlled, and the purpose of flexibly regulating the characteristics of the thin film transistor is achieved.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a preparation method thereof, and a display panel. Background technique [0002] In recent years, the application of TFT (Thin Film Transistor, thin film transistor) in LCD (Liquid Crystal Display, liquid crystal display) and OLED (Organic Light Emitting Diode, organic light emitting diode) display devices has attracted extensive attention. The active layer semiconductor material used for TFT has undergone a transition from silicon-based to oxide, and the performance of TFT is also continuously improving. [0003] In the traditional process, the width-to-length ratio (W / L) of the channel of the active layer of the TFT is limited by the process line width and wiring, and cannot be adjusted flexibly, which limits the influence of the width-to-length ratio (W / L) on the TFT characteristics. adjustment. Therefore, it is necessary to improve this defect. ...

AI Technical Summary

Problems solved by technology

[0004] An embodiment of the present invention provides an array substrate, which is used to solve the technical problem that the width-to-length ratio of the channel of the active layer of the TFT of the array substrate in the prior art is limited by the process line width and wiring, and cannot be flexibly adjusted.

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