Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of preparation method of anisotropic silicon quantum dot film

A silicon quantum dot and anisotropic technology, which is applied in the field of preparation of anisotropic silicon quantum dot thin films embedded in an amorphous medium, can solve the problems such as the inability to improve the manufacturing complexity of photovoltaic devices and the limitation of optoelectronic properties. , to achieve the effect of facilitating carrier transport, improving light absorption characteristics, enhancing absorption utilization and high photoelectric conversion efficiency.

Active Publication Date: 2015-11-18
汉中艾斯达特新材料科技有限公司
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, isotropic silicon quantum dots produce the same quantum effect in the three-dimensional direction, that is, one size only produces one energy band gap, and its optoelectronic properties are still greatly limited, and the complexity of photovoltaic device manufacturing is still not available. good improvement

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of anisotropic silicon quantum dot film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0027] The preparation method of the anisotropic silicon quantum dot thin film of the present invention adopts following scheme, comprises the following steps:

[0028] 1) Select glass and / or silicon wafer as the substrate and pre-treat before coating;

[0029] The thickness of the substrate is 500-520 μm, and it is ultrasonically cleaned for 15-20 minutes by surfactant cocoic acid monoethanolamide (CMEA) or cocoic acid diethanolamide, (flowing) deionized water, acetone, and absolute ethanol in sequence.

[0030] 2) Using Ar gas as the sputtering gas, under the condition of applying a negative bias voltage of 80V to the substrate, use RF and DC power sources to sputter silicon-germanium alloy targets and carbon targets respectively;

[0031] The film deposition and characterization adopt the magnetron sputtering equipment produced by German SPECS company and the supporting online detection device; the size specification of the silicon-germanium alloy target and the carbon targ...

Embodiment 1

[0042]Glass is selected as the substrate and pre-treated before coating. The thickness of the substrate is 500 μm, which is passed through the surfactant cocoic acid monoethanolamide (CMEA) or commercial white cat detergent, (flowing) deionized water, acetone, and absolute ethanol in sequence. Each was ultrasonically cleaned for 15 min.

[0043] Using argon as the sputtering gas, magnetron co-sputtering is performed on the silicon-germanium alloy target and the carbon target, and an amorphous silicon-germanium carbide film with an atomic ratio of silicon, germanium and carbon of about 7:1:2 is deposited on the glass substrate. Among them, the silicon-germanium alloy target uses a 100W RF power supply, the carbon target uses a 100W DC power supply, and the substrate bias voltage is 80V; the sputtering Ar gas flow rate is 4 sccm; the deposition time is about 2 hours, and the film thickness is about 150nm. The sample was annealed in stages under nitrogen gas: first, the temperatu...

Embodiment 2

[0047] Silicon wafers were selected as the substrate and pre-treated before coating. The thickness of the substrate was 520 μm, and it was ultrasonically cleaned with surfactant coconut acid diethanolamide, (flowing) deionized water, acetone, and absolute ethanol in sequence for 20 minutes.

[0048] Using argon as the sputtering gas, magnetron co-sputtering is carried out on the silicon-germanium alloy target and the carbon target, and an amorphous silicon-germanium carbide film with an atomic ratio of silicon, germanium and carbon of about 6.5:1.5:2 is deposited on the silicon substrate. . Among them, the silicon-germanium alloy target uses a 120W RF power supply; the carbon target uses a 130W DC power supply; the substrate bias voltage is 80V; the sputtering Ar gas flow rate is 4 sccm; the deposition time is about 2.2h, and the film thickness is about 150nm. The sample was annealed in stages under nitrogen gas: first, the temperature was raised from room temperature to 1000°...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
band gapaaaaaaaaaa
band gapaaaaaaaaaa
Login to View More

Abstract

The invention relates to a preparation method of a silicon quantum dot film having anisotropy, and discloses a technical method for regulating elemental composition variation to form different strain energy induced anisotropic polymorphous silicon quantum dots, further regulating the absorption spectrum range and obviously improving the photoelectric conversion efficiency of a used material. The preparation method comprises the following main steps: performing pretreatment prior to coating, performing magnetron co-sputtering on a silicon-germanium alloy target and a carbon target having different composition ratios with Ar ions, regulating the sputtering power of the silicon-germanium target and the carbon target, and depositing a composition-controllable amorphous silicon carbide-germanium film on a silicon and glass base; and then, performing multi-stage annealing treatment in a nitrogen gas atmosphere, thus forming the silicon quantum dot film having anisotropy, which is inlaid in amorphous SiC. The film has multi-exciton effect, and simultaneously has multi-wavelength light absorption characteristics in a wavelength range of 1800nm (infrared) to 300nm (ultraviolet), thus hopefully improving the light absorption and photoelectric conversion efficiency of a silicon-based photovoltaic device greatly.

Description

technical field [0001] The invention belongs to the technical field of third-generation solar cells, in particular to a method for preparing an anisotropic silicon quantum dot film embedded in an amorphous medium, and belongs to the technical field of solar cells and nanomaterial applications. Background technique [0002] With the continuous deterioration of the living environment of human beings and the shortage of non-renewable energy sources, protecting the environment, maintaining ecological balance and utilizing clean energy have become the themes of the development of human society. As the cleanest renewable energy, solar energy has undoubtedly become the focus of researchers' attention. The goal of the third-generation solar energy is to reduce the cost and significantly improve the photoelectric conversion efficiency of photovoltaic devices on the basis of the second-generation thin-film solar cells. At present, the single-bandgap Shockley-Queisser limit of materia...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/58
Inventor 畅庚榕马飞徐可为
Owner 汉中艾斯达特新材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com