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Method for manufacturing photon sieve with high height-width ratio

A technology of photon sieve and aspect ratio, which is applied in the field of making photon sieves with large aspect ratios, can solve problems such as being easy to fall and difficult to manufacture photonic sieves with high aspect ratios, and achieves high success rate, reduced production costs, and wide application The effect of applying the foreground

Active Publication Date: 2012-05-23
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the traditional production of photonic sieve, because the colloidal column is greatly affected by the tension of water during the production process, it is easy to fall down, and it is difficult to produce a photonic sieve with a large aspect ratio

Method used

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  • Method for manufacturing photon sieve with high height-width ratio
  • Method for manufacturing photon sieve with high height-width ratio
  • Method for manufacturing photon sieve with high height-width ratio

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Embodiment Construction

[0037] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0038] The method for making a photon sieve with a large aspect ratio provided by the present invention is mainly realized based on Babinet's principle. The Babinet principle means: under the illumination of a point light source, two complementary diffraction screens u0(x, y), uc(x, y) are on the plane conjugate to the point light source, except for the geometric image point of the point light source , both have the same Fraunhofer diffraction pattern. It can be seen from Babinet's principle that although the physical structure of the photon sieve produced by the present invention is different from that of the traditional one, it still does not affect the performance of the photon sieve as a whole.

[0039] Such as figu...

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PUM

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Abstract

The invention discloses a method for manufacturing a photon sieve with a high height-width ratio. The method comprises the following steps of: manufacturing a photon sieve mask plate and an optical alignment mask plate; performing X-ray copying by utilizing the photon sieve mask plate to obtain a first copied mask plate; performing the X-ray copying again by utilizing the first copied mask plate to obtain a second copied mask plate; and optically aligning a photon sieve pattern of the second copied mask plate by utilizing the optical alignment mask plate as a mask to obtain the photon sieve with the high height-width ratio. Compared with the conventional manufacturing method for the photon sieve, the method has the advantage that: the photon sieve with a higher height-width ratio and a shorter operating wavelength can be manufactured.

Description

technical field [0001] The invention relates to the technical field of micro-nano processing of diffractive optical elements, in particular to a method for manufacturing a photon sieve with a large aspect ratio. Background technique [0002] In the field of high-energy rays, only when the thickness of the absorber reaches a certain value can the corresponding rays be absorbed, so it is of great significance to manufacture diffractive optical elements with large aspect ratios. The photon sieve is a new type of diffractive optical element based on the Fresnel zone plate. It replaces the area corresponding to the bright ring on the Fresnel zone plate with a large number of randomly distributed light-transmitting holes. The diameter of the light-transmitting holes is corresponding 1.53 times the width of the zone plate ring. The randomly distributed light-transmitting holes make the diffracted light interfere with each other, which can effectively suppress the side lobe effect ...

Claims

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Application Information

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IPC IPC(8): G02B5/18G03F7/00G03F1/00
Inventor 谢常青辛将朱效立高南刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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