The invention relates to a
laser direct-write photoetching
system based on a
photon sieve, which consists of an
exposure light source (1), a lens (2), a spatial filtering device (3), a uniform collimating lens group (4), a reflector (5), the
photon sieve (6), a
photoresist (7), a substrate (8) and precise workpiece platforms (9). The
laser light source becomes uniform and collimating parallel light after passing through the lens, the spatial filtering device and the uniform collimating lens group, the collimating parallel light irradiates the
photon sieve, and the
photon sieve has excellent focusing capability and focalizes on the substrate coated with the
photoresist. The substrate is placed on X and Y precise workpiece platforms to achieve the required photoetching patterns by using the
relative motion between the
photon sieve and the substrate. The
laser direct-write photoetching
system has good process compatibility, the structure of the whole
system is not needed to be changed; and only by changing a focusing element into a
photon sieve device, the nano-scale resolving power can be achieved by using the conventional i ling and g line laser direct-write photoetching system. If the
wavelength of the
exposure light source is further shortened on the basis, higher resolving power can be achieved, and the nano-scale patterns can be made with ultra-low cost.