94 results about "Photon sieve" patented technology

An imaging device consistent with one of numerous embodiments has an opaque planar sheet with a plurality of pinholes defining a photon sieve in the sheet, wherein, the photon sieve comprises at least first and second regions. The first region exhibits a first focal length, a first field of view, a first transmissivity, a first resolution and a first wavelength, and the second region exhibiting a second focal length, a second field of view, a second transmissivity, a second resolution and a second wavelength. At least one of the first focal length, the first wavelength, the first transmissivity, the first resolution and the first field of view is different from the second focal length, the second wavelength, the second transmissivity, the second resolution and the second field of view. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

The invention relates to a laser direct-write photoetching system based on a photon sieve, which consists of an exposure light source (1), a lens (2), a spatial filtering device (3), a uniform collimating lens group (4), a reflector (5), the photon sieve (6), a photoresist (7), a substrate (8) and precise workpiece platforms (9). The laser light source becomes uniform and collimating parallel light after passing through the lens, the spatial filtering device and the uniform collimating lens group, the collimating parallel light irradiates the photon sieve, and the photon sieve has excellent focusing capability and focalizes on the substrate coated with the photoresist. The substrate is placed on X and Y precise workpiece platforms to achieve the required photoetching patterns by using the relative motion between the photon sieve and the substrate. The laser direct-write photoetching system has good process compatibility, the structure of the whole system is not needed to be changed; and only by changing a focusing element into a photon sieve device, the nano-scale resolving power can be achieved by using the conventional i ling and g line laser direct-write photoetching system. If the wavelength of the exposure light source is further shortened on the basis, higher resolving power can be achieved, and the nano-scale patterns can be made with ultra-low cost.

An imaging device (30) can include a plurality of lenses (51, 52, 53, 54) mounted on a multi-dimensional support structure (32), a plurality of optical detectors (40) corresponding to the plurality of lenses for capturing an optical signal from at least two lenses among the plurality of lenses, and a processor (34) for combining the optical signal from at least two lenses to form an image and electronically controlling the field of view and a resolution of the image. The plurality of lenses each can include an array of sub-wavelength apertures or a plurality of photon sieve lenses (36).

The use of photon sieves may be as a pupil defining element in an illumination system; a field of defining elements in an illumination system; a pupil lens element in a projection lens; a color correction system in the projection system; or as a transmitting diffractive element for EUV.

The invention discloses a large-aperture imaging photon sieve and a production method thereof, which belong to the technical field of diffractive optical elements. The large-aperture imaging photon sieve comprises a transparent substrate and an opaque metal thin film plated on the transparent substrate, wherein, a plurality of transparent small holes are randomly distributed on the opaque metal thin film, and the transparent small holes which are randomly distributed lead diffraction light to generate mutual interference, thereby effectively suppressing sidelobe effect and high-level diffraction, improving resolution and obtaining more sharp focal spots. The production method adopts a Connes shaping function for shaping the small holes which are randomly distributed, thereby reducing the number of the holes, reducing the data amount of a layout, optimizing the overall distribution of the small holes, leading the imaging focal spots to be more sharp and leading the level of the existing processing technology to be capable of meeting the manufacturing needs of the large-aperture photon sieve.

A phase type photon sieve is improved from a conventional Fresnel zone plate structure and consists of orifices distributed on transparent and non-transparent annulus of the Fresnel zone plate randomly, wherein Pi-phase shift is existed between the orifices on the transparent annulus and the orifices on the non-transparent annuls, and phase difference is achieved by accurately controlling etching depth of each annulus. Manufacturing process of the phase type photon sieve is completed by an electro beam machining process. Compared with the Fresnel zone plate, the phase type photon sieve can keep high diffraction efficiency and simultaneously has more excellent resolution capacity. Compared with an amplitude photon sieve, the phase type photo sieve can keep high resolution capacity and simultaneously has more excellent diffraction efficiency. As an excellent nano-level diffraction imaging device, the phase type photon sieve can be widely applied to fields of photo-etching, astronomical observation, air shot, weapon vision and the like.

The invention discloses a defect detection system for an extreme ultraviolet lithography mask. The defect detection system for the extreme ultraviolet lithography mask comprises an extreme ultraviolet light source, an extreme ultraviolet light transmission system (comprising a multilayer plane mirror and a multilayer concave condenser), an extreme ultraviolet lithography mask, a sample scan stage, a photon sieve, a CCD camera, a PC, an vibration isolation platform, a vacuum chamber and a multilayer half-transparent half-reflecting mirror. In the defect detection system for the extreme ultraviolet lithography mask, a conventional Schwarzchild lens is replaced by the photon sieve, so that imaging of the mask by an extreme ultraviolet band is realized, and thus defects on the mask are detected. Due to the fact of replacement of the conventional Schwarzchild lens which is difficult to process, high in cost and large in volume by the photon sieve which has the characteristics of small volume, good workability, low cost and high resolution ratio, the defect detection system for the extreme ultraviolet lithography mask is realized in lower cost, smaller volume and high resolution ratio.

The invention discloses a quantitative correlation amplitude holographic method based on a photon sieve and belongs to the field of micro-nano holography. The implementation method comprises the following steps: obtaining two binary amplitude holograms according to a holographic reproduction image, and representing phase information in an amplitude form to improve a traditional phase retrieval GSalgorithm to generate two independent binary amplitude holograms; establishing a quantitative association relationship between the two independent binary amplitude holograms by introducing a concept of 'holographic mask' to realize the quantitative association of the binary amplitude holograms, performing evaluation and cyclic optimization by measuring a peak signal to noise ratio (SNR) to obtaina group of quantitative associated amplitude holograms corresponding to the holographic reproduction image, and generating a processing file. Two mutually associated transmission type photon sieves are prepared by using a pixel with a transparent unit coding value of 1 and a pixel with a lightproof unit coding value of 0. Visible light or near-infrared incident light irradiates on two mutually associated transmission type photon sieves, and the holographic reproduction is carried out on a Fourier surface to obtain two completely different reproduction images.

The invention provides a multilayer imaging device and imaging method based on a vortex photon sieve telescope system. The main component of multi-layer imaging is a combination of a vortex photon sieve and a telescope system, and the vortex photon sieve is a diffractive optical element capable of achieving a vortex light field. According to the invention, the fixed system discrete multi-layer imaging of a coherent light field can be achieved, the off-axis imaging of different magnifications can be simultaneously achieved by moving the photon screen, the degree of freedom of the optical path design is increased, the operation is simple, and the structure is stable. The device is likely used in the field of a multi-layer imaging system, an endoscopic system, wavefront measurement, medical imaging, tomography, three-dimensional information storage and optical capture.

The invention relates to a method for producing oval vortex light of an amplitude modulator. The method is characterized in that a novel amplitude-type photon screen is generated through imitated spiral lines and is used for appointing production of oval vortex light on a plane. The novel amplitude-type photon screen comprises a transparent medium substrate, a light-proof metal film and a spiral screen hole structure and is characterized in that the imitated spiral lines are introduced to a traditional wave zone plate structure, small holes are arranged along the spiral lines to form the amplitude-type spiral photon screen, additional optical elements are not needed, and vortex light beams can be produced. The amplitude-type photon screen related in the method is easy to process and copy and can be applied to the fields of light communication, super-resolution imaging, laser precision machining, particle control, data storage, remote sensing and the like and is applicable in wave bands ranging from X rays to terahertz.

The invention discloses an array type light evening device with an annulus photon screen and a manufacturing method thereof. The array type light evening device with the annulus photon screen is an annulus photon screen array which is manufactured on a transparent medium, and the annulus photon screen is used as a basic unit of the array. The annulus photon screen is formed by a plurality of homocentric diffractive hole annuluses and a plurality of homocentric etching ring annuluses, which are alternately nested, and the diffractive hole annulus is the closest to the center of the annulus photon screen; the width of the diffractive hole annulus and the width of the etching ring annulus are gradually decreased respectively from the center of the annulus photon screen to outside, the width of the diffractive hole annulus is equal to the width of the etching ring annulus which is adjacent to the diffractive hole annulus far from the central direction of the annulus photon screen, and the size of each light penetrating hole is the same as the width of the corresponding etching phase annulus. By using the invention, gauss beams and other wavefront uneven laser beams are transformed into wavefront diffractive beams which are approximate planes.

The invention discloses a broadband photon sieve based on wavefront coding technology. The photon sieve is characterized in that a phase coding plate is included, one surface of the phase coding plate is a phase coding surface, the other surface is a planar surface, a photon sieve clings to the planar surface, the phase coding surface is one selected from a triple coding surface, a logarithm coding surface and a sine coding surface, and the photon sieve carries out diffractive imaging via light of the phase coding surface. The wavefront coding technology is introduced into the photon sieve field innovatively, the phase coding plate is arranged in front of the photon sieve, wavefront coding is carried out on light entering the photon sieve, the sensitivity of the photon sieve to the wavelength is reduced, and the broadband is expanded.

The invention discloses an array photon sieve light evener which is an array of photon sieves, wherein the array is manufactured on a transparent medium according to the actual needs, and the size of the array is given out according to the actual needs. The photon sieves are a large number of diffractive optical elements with light-transmitting micropores different in radius, wherein the diffractive optical elements are manufactured on a Fresnel wave band ring, and the photon sieves are basic units of the array photon sieve light evener; and other parts are light-proof. The array is in the structure with repeated photon sieves. The invention simultaneously discloses a method for manufacturing the array photon sieve light evener. The array photon sieve light evener realizes wavefront flattening for gauss light beams and other uneven non-planar wavefront light beams, the light evening of the light beams, and wavefront light beams approaching to the plane. The light beams are widely applied to light path systems.

The invention discloses an interlaced type photon sieve, which comprises a transparent medium, a metallic layer and a superfine structure, wherein the metallic layer is prepared on the transparent medium; the required superfine structure is formed on the metallic layer by etching; the superfine structure comprises a plurality of small holes with different radiuses which are annularly distributed on a plurality of odd annular bands and a plurality of even annular bands; the ratios of the diameters of the small holes on the even and odd annular bands to the width of the located annular band aredifferent; amplitude signs of diffraction optical waves of the small holes on the even and odd annular bands at a focal point are reverse; the small holes on the even and odd annular bands have constructive interference at the focal point; smaller light spots are acquired; and the photon sieve size is increased under the same condition of minimum processing size. Through the interlaced type photon sieve provided by the invention, the size of the main spot formed by the focusing diffraction of the photon sieve can be efficiently compressed and the resolution ratio of an optical system can be increased.

The invention discloses a method for producing a phase type photon sieve based on an HSQ (Hexadecimal Sequential) process, comprising the following steps of: A. manufacturing a first photon sieve photomask A and a second photon sieve photomask B; B. coating HSQ glue on a substrate, phtoetching and drying the HSQ glue by using the first photon sieve photomask and evaporating a layer of metal film; C. removing the metal membrane on the HSQ by using an electrochemical corrosion method; D. coating 5241 positive photoresist on the substrate, photoetching the substrate by using the second photon sieve photomask B and removing the metal member of the exposed part; and E. obtaining the phase type photon sieve after the photoresist is removed. Compared with the traditional etching method, the invention has the characteristics of simple manufacturing process, low cost, favorable stability, capability of reaching higher resolution and the like and is beneficial to being widely popularized and applied.

The invention discloses a large area photon sieve composed of sheets with girdle band holes and characterized in that the girdle band is divided into G regions from the inner portion to the outer portion along the radius direction of the photon sieve. The regions are combined relative to the girdle band of the Phase Fresnel zone plate so as to correspondingly enhance the correspondent hole radius. The hole distribution number on each girdle band is optimized. The large area photon sieve is divided into a plurality of regions by knowing the imaging mechanism. The hole diameter in each region is amplified to a scale. Furthermore, the hole diameter of the photon sieve, especially the peripheral hole dimension is amplified by combining the girdle bands so as to basically improve the resolution of the optical system.

The embodiment of the invention discloses a photon sieve and a manufacturing method thereof. The photon sieve comprises a light-transmitting substrate, a plurality of light-tight films and a plurality of small holes, wherein the plurality of light-tight films are located on the light-transmitting substrate and consist of a plurality of metal films and dielectric films at intervals; and the plurality of small holes are formed in the light-tight films and are distributed in a zonal shape, and a plurality of small holes in each girdle are randomly distributed and are not overlapped with one other. Because the plurality of metal films and dielectric films at intervals are arranged on the light-transmitting substrate, and the plurality of small holes distributed in the zonal shape are formed in the plurality of metal films and dielectric films at intervals, when light irradiates the a photon sieve, the surface plasma polarization and the surface plasma coupling of the metal films and the dielectric films are enhanced, the light transmittance is effectively improved, and further the diffraction efficiency of the photon sieve is improved.

The invention discloses a compound type zone plate photon sieve which comprises a light-transmitting substrate and a lighttight metal film coated on the light-transmitting substrate. A series of light-transmitting ring strips and a plurality of light-transmitting small holes are distributed on the lighttight metal film. The diameter of each light-transmitting small hole is 1.5 times the width of the corresponding zone plate ring strip. Relative to zone plates, the light-transmitting small holes which are distributed randomly enable diffraction light to mutually interfere so that the side lobe effect and high-order diffraction can be effectively inhibited, the resolution is improved, and a sharp focal spot is obtained. The zone plates are embedded on 2/3 of middle portion of the compound type zone plate photon sieve on the basis of an ordinary photon sieve so that the transmittance is improved, the diffraction efficiency is improved, and the imaging contrast is improved.

A lidar system includes an optical transmitter having a laser light source that is configured to generate a beam of light that is azimuthally polarized or has Orbital Angular Momentum (OAM). The lidar system further includes an optical receiver having an optical sensor defining a focal plane. A photon sieve is configured to produce a ring pattern on the focal plane corresponding to a laser return signal. The ring pattern comprises azimuthally polarized or Orbital Angular Momentum (OAM) light that is transmitted by the transmitter and reflected towards the receiver. The photon sieve is also configured to cause stray light that is not polarized to produce a central region at the center of the ring pattern that is distinct from the ring pattern.

A point spread function determines an imaging property of an optical system, and different imaging results can be realized by different point spread functions. A Fermat spiral line is introduced intothe Greek ladder photon sieve, and the Fermat spiral line modulates distribution positions of sieve holes in the Greek ladder photon sieve to obtain the Fermat spiral Greek ladder photon sieve. A plurality of axial focuses are generated through the imaging light path based on the Fermat spiral Greek ladder photon sieve, a function of a multi-focal-plane different-point spread function of a singledevice is achieved, anisotropic Airy disks and vortex focuses are included, and the method can be applied to focusing and imaging from X rays to a terahertz waveband in a coherent light field. A first focus and a third focus are anisotropic Airy disks, different resolutions in different directions can be achieved for an input object, and the resolution of the object in the interested direction can be improved; the second focus is the vortex focus, the vortex focus can be used for optical capture; in addition, radial Hilbert transform can be achieved based on spiral phase filtering when the vortex focus is used for imaging, and edge enhancement of an amplitude and a phase object is realized.

The invention discloses a method for manufacturing an array phase zone photon sieve dodging device, which is implemented by using a large-scale integrated circuit technology and a plane photoetching technology. The method comprises the following steps of: manufacturing a master plate by using an electron beam direct-writing method; transferring patterns of the master plate onto optical glass coated with photoresist with a contact-type photoetching method; and etching the patterns transferred onto the photoresist of the optical glass into the optical glass by using an inductive coupling plasma etching technology. The method disclosed by the invention can be used to realize wavefront flattening on a Gaussian light beam and other uneven non-planar wavefront light beams, realize dodging of the light beams and also realize approximately-planar light beams.