Laser direct-write photoetching system based on photon sieve

Abstract

The invention relates to a laser direct-write photoetching system based on a photon sieve, which consists of an exposure light source (1), a lens (2), a spatial filtering device (3), a uniform collimating lens group (4), a reflector (5), the photon sieve (6), a photoresist (7), a substrate (8) and precise workpiece platforms (9). The laser light source becomes uniform and collimating parallel light after passing through the lens, the spatial filtering device and the uniform collimating lens group, the collimating parallel light irradiates the photon sieve, and the photon sieve has excellent focusing capability and focalizes on the substrate coated with the photoresist. The substrate is placed on X and Y precise workpiece platforms to achieve the required photoetching patterns by using the relative motion between the photon sieve and the substrate. The laser direct-write photoetching system has good process compatibility, the structure of the whole system is not needed to be changed; and only by changing a focusing element into a photon sieve device, the nano-scale resolving power can be achieved by using the conventional i ling and g line laser direct-write photoetching system. If the wavelength of the exposure light source is further shortened on the basis, higher resolving power can be achieved, and the nano-scale patterns can be made with ultra-low cost.

Description

technical field [0001] The invention relates to a photon sieve-based laser direct writing photolithography system, which belongs to the technical field of laser direct writing photolithography used in the manufacture of nanoscale devices in the optical microfabrication technology. Background technique [0002] In recent years, guided by advanced nano-processing technology, driven by huge market demand for information security, optoelectronic devices, biochips, communication equipment, radar, missiles, artificial satellites, etc., the field of nano-scale manufacturing technology has developed rapidly and has a wide variety Advanced nano-devices continue to come out, so that many difficult problems in the past have a solution. However, as the integration level of the semiconductor industry increases year by year, people's requirements for the resolution of lithography equipment used for nanoscale device fabrication are also getting higher and higher. Traditional proximity / con...

AI Technical Summary

Problems solved by technology

The emergence of electron beam lithography, ion beam lithography, atomic lithography and other technologies based on charged particle lithography has greatly improved the resolution, which can theoretically reach about 5-10nm, but there are still some key technologies that have yet to be resolved. Solve, such as the production efficiency is very low, unable to meet the needs of mass production; the proximity effect of charged particles; and the traditional optical lithography is not compatible with the process, etc.

Images